TiN MIM eFuse Memory Cell Structure for Lower Programming Voltage
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Solution Overview
Problem
Existing eFuse memory cells require large programming voltages and currents, leading to increased cell area and scalability issues, particularly in advanced technology nodes, due to the limitations of traditional resistors formed in metallization layers.
Innovation Solution
Implementing a metal-insulator-metal (MIM) fuse structure using titanium nitride (TiN) as the resistor, which can be formed during the back-end-of-line (BEOL) or middle-end-of-line (MEOL) process, reducing cell area and programming voltage requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If traditional resistors formed in metallization layers are used in eFuse memory cells, then the cell area increases and programming voltage requirements increase, but the manufacturing process is simpler
Solution Approach 1:
The patent changes the material parameter of the resistor from traditional metallization layer materials to titanium nitride (TiN), which has different electrical and physical properties. This material substitution enables reduced cell area and lower programming voltage requirements while maintaining manufacturability through established BEOL/MEOL processes
Solution Approach 2:
The patent introduces a metal-insulator-metal (MIM) fuse structure as an intermediary component between the transistor and the bit line. This MIM structure with TiN resistor serves as a mediator that enables lower voltage operation and reduced area compared to traditional resistor implementations
2Power
If traditional resistors formed in metallization layers are used in eFuse memory cells, then the programming voltage and current requirements increase, but the device structure is more conventional
Solution Approach 1:
The patent employs a composite metal-insulator-metal (MIM) structure where titanium nitride (TiN) serves as the resistive element sandwiched between metal layers and insulator layers. This composite structure enables reduced programming voltage while providing the necessary electrical characteristics for eFuse operation
Solution Approach 2:
By changing the resistor material to titanium nitride and forming it as a MIM structure, the patent alters the electrical parameters (resistance, voltage requirements) of the device. This material and structural change enables lower programming voltage operation compared to traditional metallization layer resistors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TiN-based MIM fuse structure allows for smaller eFuse memory cells with reduced programming voltage needs, enhancing scalability and compatibility with advanced technology nodes.
Implementation Method 1
the resistor includes a metal-based layer with a resistivity configured to irreversibly transition from a first resistance state to a second resistance state
Data Source
AI summary
A memory device is disclosed. The memory device includes a transistor. The memory device includes a resistor electrically coupled to the transistor, the transistor and the resistor forming an electrical fuse (eFuse) memory cell. The memory device includes a plurality of interconnect structures formed over a source/drain structure of the transistor. The memory device includes a plurality of via structures formed over the source/drain structure of the transistor. The resistor is disposed between the source/drain structure of the transistor and a topmost one of the plurality of interconnect structures. The resistor is formed of titanium nitride (TiN).