TiN/N-TiO2 Photoelectrode Structure for Faster Photoelectric Conversion

The patent combines multiple manufacturing steps into a single sputtering process. The TiN layer and N-TiO2 layer are deposited sequentially in one continuous operation, eliminating the need for separate coating processes, multiple drying steps, and complex annealing procedures. This merging of operations directly addresses the contradiction by simplifying the manufacturing process while achieving the required device structure.

The patent utilizes sputtering parameter changes to achieve different material layers and doping conditions. By adjusting sputtering power, gas flow ratios (particularly N2/Ar ratio), and deposition temperature during the sputtering process, the device achieves both the TiN conductive layer and the nitrogen-doped TiO2 photoactive layer in one process. This parameter-based control eliminates complex chemical processing steps.

The patent employs a composite structure consisting of TiN (titanium nitride) as the conductive layer and N-TiO2 (nitrogen-doped titanium dioxide) as the photoactive layer. The TiN provides excellent electrical conductivity and light absorption in the visible range, while the nitrogen-doped TiO2 extends light absorption into the visible spectrum and provides photo catalytic activity. This composite material approach resolves the contradiction by achieving high photoelectric conversion efficiency through complementary material properties.

The patent applies different material properties to different layers of the device structure. The TiN layer is optimized for electrical conductivity and visible light absorption, while the N-TiO2 layer is optimized for photo catalytic water splitting. This local optimization of material properties at different depths of the device structure enables high overall efficiency while minimizing energy losses in each specific functional region.

The patent merges multiple discrete manufacturing operations into a single sputtering process. Instead of separately coating TiN, separately coating TiO2, performing multiple drying cycles, and conducting complex annealing treatments, the invention achieves all layers and doping in one continuous sputtering operation. This dramatically reduces manufacturing time and increases productivity while maintaining device quality.

The patent replaces complex chemical processing methods with physical sputtering deposition. Traditional methods would involve chemical coating, solvent-based processing, and thermal annealing. The sputtering process uses physical vapor deposition with plasma assistance, eliminating the need for chemical solvents, multiple drying steps, and high-temperature annealing. This substitution of mechanical/physical processes for chemical processes reduces manufacturing time and simplifies the production line.