Tin Oxide Spacer-on-Spacer Patterning for Sub-40 Nm Pitch
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Solution Overview
Problem
Multiple patterning processes such as double and quad patterning in semiconductor fabrication increase production costs due to the number of deposition and etching operations, and existing spacer materials like silicon oxide are prone to collapse at small critical dimensions.
Innovation Solution
Implementing tin oxide as a spacer material in spacer-on-spacer patterning schemes, which is robust and can be easily removed using hydrogen, reducing the need for additional operations and maintaining feature integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes (double patterning and quad patterning) are used to fabricate structures with smaller pitches, then manufacturing precision is improved, but device complexity increases due to increased number of deposition and etching operations
Solution Approach 1:
The patent combines multiple patterning operations into a single spacer-on-spacer process. Specifically, it forms a first spacer, then directly forms a second spacer on the first spacer, eliminating the need for separate core layer deposition and pattern transfer operations. This merging of operations reduces process complexity while maintaining the ability to fabricate structures with smaller pitches.
Solution Approach 2:
The patent segments the patterning process into distinct spacer formation stages. Instead of using traditional multi-step lithography and etching, it divides the process into sequential spacer depositions (first conformal spacer material, then second conformal spacer material), where each spacer serves a specific function in defining the final pattern.
2Manufacturing precision
If multiple patterning processes are used to achieve smaller pitches, then manufacturing precision is improved, but production cost increases due to increased number of operations
Solution Approach 1:
The patent merges multiple costly operations into a streamlined spacer-on-spacer process. By forming spacers conformally on existing spacers rather than performing separate lithography, etching, and deposition cycles, the number of expensive manufacturing steps is reduced, thereby lowering production cost while achieving the same precision outcomes.
3Manufacturing precision
If traditional multiple patterning processes are used, then structures with smaller pitches can be formed, but reliability decreases due to increased potential defects from more operations
Solution Approach 1:
The patent reduces the total number of process operations by combining multiple patterning steps into a unified spacer-on-spacer approach. Fewer deposition and etching operations mean fewer opportunities for defects to occur, thereby improving reliability while still achieving structures with smaller pitches.
4Ease of manufacture
If tin oxide is used as conformal spacer material, then ease of manufacture is improved by eliminating operations, but manufacturing precision must be maintained through robust spacer properties
Solution Approach 1:
The patent changes the material parameter by using tin oxide as the conformal spacer material. Tin oxide provides robust mechanical and thermal properties that maintain critical dimension control during subsequent processing steps, even as the overall process is simplified. This material selection ensures that ease of manufacture does not compromise manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Tin oxide spacers enable the fabrication of features with pitches less than 40 nm while reducing production costs and defects, and are compatible with various core materials, maintaining critical dimension accuracy.
Implementation Method 1
The tin oxide is deposited using a tin halide, organometallic tin-containing compound, chlorinated organometallic tin-containing compound, and combinations thereof
Implementation Method 2
the tin oxide is provided using at least one of chemical vapor deposition process, atomic layer deposition, or any combination thereof
Implementation Method 3
the tin oxide is provided using plasma-enhanced atomic layer deposition (PEALD)
Implementation Method 4
the tin oxide is formed by exposing the semiconductor substrate to the tin-containing precursor and an oxygen-containing precursor including oxygen
Data Source
AI summary
Disclosed are methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.