Tin Oxide TFET pn Junction Formation With Fewer Process Steps
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing method of manufacturing tunnel field-effect transistors (TFETs) requires a large number of processes due to the need for separate film forming, isolation etching, and wiring processes for p-type and n-type semiconductor layers made of different materials, leading to inefficiencies and potential damage to adjacent circuits.
Innovation Solution
The method involves using a single material, tin oxide, for both p-type and n-type semiconductor layers, allowing for the formation of a pn junction through conductivity type changes via thermal processing, reducing the number of film forming, isolation etching, and wiring processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate film forming, isolation etching, and wiring processes are used for p-type and n-type semiconductor layers made of different materials, then the TFET structure can be formed, but the number of manufacturing processes increases and adjacent circuits may be damaged
Solution Approach 1:
The patent uses the same tin oxide material for both p-type and n-type semiconductor layers, creating homogeneity in material composition. This allows a single film forming process to create both layers, eliminating the need for separate film forming processes for different materials and reducing the overall number of manufacturing steps while maintaining the required TFET structure
Solution Approach 2:
The patent combines the formation of p-type and n-type semiconductor layers into a single film forming process by using tin oxide for both layers and controlling conductivity type through subsequent treatments. This merging of processes reduces the total number of steps and minimizes the risk of damaging adjacent circuits through multiple etching and deposition cycles
2Reliability
If separate film forming, isolation etching, and wiring processes are used for p-type and n-type semiconductor layers made of different materials, then the TFET structure can be formed, but the manufacturing process becomes inefficient
Solution Approach 1:
By using homogeneous tin oxide material for both p-type and n-type layers, the patent enables a single film deposition process to create both semiconductor layers, significantly improving manufacturing efficiency compared to forming separate layers from different materials that would require multiple deposition processes
Solution Approach 2:
The tin oxide material serves multiple functions: it forms both the p-type and n-type semiconductor layers, and its conductivity type can be adjusted through oxygen partial pressure control during deposition or subsequent thermal treatments. This multi-functionality reduces the number of specialized processes needed and improves overall manufacturing productivity
3Productivity
If a single material tin oxide is used for both p-type and n-type semiconductor layers, then the number of film forming, isolation etching, and wiring processes is reduced, but conductivity type control must be achieved through additional processing
Solution Approach 1:
The patent controls the conductivity type of tin oxide by changing processing parameters, specifically the oxygen partial pressure during film deposition or thermal treatment temperature. By adjusting these parameters, the same tin oxide material can be transformed from p-type to n-type conductivity, eliminating the need for separate materials while maintaining process efficiency
Solution Approach 2:
The patent replaces the mechanical approach of using different materials for p-type and n-type layers with a chemical/thermal approach. Instead of depositing different materials through separate film forming processes, the patent uses thermal treatment or oxygen plasma treatment to change the conductivity type of the same tin oxide layer, simplifying the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces the risk of damaging adjacent circuits, suppresses off-current, enables miniaturization, and allows for the formation of ohmic contacts using a single conductive material, thereby enhancing the efficiency and reliability of the TFETs.
Implementation Method 1
changing a conductivity type of a portion of a layer made of the tin oxide semiconductor to form the pn junction
Data Source
AI summary
A method of manufacturing a semiconductor device including a tin oxide semiconductor having a pn junction between a source electrode and a drain electrode, the method including, changing a conductivity type of a portion of a layer made of the tin oxide semiconductor to form the pn junction.