Tin-Perovskite FET Memory with Hollow Structure Against Oxidation
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Solution Overview
Problem
Tin-based perovskite thin films are prone to oxidation and vacancy formation due to Sn2+ to Sn4+ conversion, leading to instability and loss of electrical properties, limiting their use in semiconductor applications.
Innovation Solution
A diammonium organic cation is added to form a hollow structure in the tin-based perovskite thin film, combined with a metal fluoride compound to suppress oxidation and control hole concentration, forming a stable and uniform semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If tin-based perovskite thin film is used as semiconductor active layer, then eco-friendly and high mobility is achieved, but oxidation and vacancy formation occur leading to instability
Solution Approach 1:
A diammonium organic cation is introduced as an intermediary substance that occupies void spaces within the perovskite crystal lattice. This intermediary prevents direct contact between oxygen/moisture and the tin-based perovskite, thereby suppressing oxidation and vacancy formation while maintaining the eco-friendly and high-mobility characteristics of the material
Solution Approach 2:
The diammonium organic cation creates a chemically inert environment within the crystal lattice by filling void spaces and blocking pathways for oxygen and moisture penetration. This inert environment protects the tin-based perovskite from oxidation without requiring external protective atmospheres or complex encapsulation structures
2Reliability
If diammonium organic cation is added to form hollow structure, then stability and electrical properties are improved, but manufacturing process complexity increases
Solution Approach 1:
The diammonium organic cation is incorporated into the perovskite crystal lattice during a single solution processing step, merging the stabilizing function with the existing fabrication process. This eliminates the need for separate stabilization steps or additional manufacturing complexity while achieving improved stability and electrical properties
Solution Approach 2:
The invention modifies the chemical composition parameter of the perovskite by introducing diammonium organic cation at controlled concentrations. This parameter change induces hollow structure formation and stabilizes the crystal lattice without requiring changes to manufacturing temperature, pressure, or equipment, thereby maintaining process simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes the tin-based perovskite thin film, enhancing its electrical properties and memory characteristics, enabling high-performance, eco-friendly memory devices with long information retention and low driving voltage.
Implementation Method 1
A diammonium organic cation is added to form a hollow structure in the tin-based perovskite thin film
Implementation Method 2
combined with a metal fluoride compound to suppress oxidation and control hole concentration
Implementation Method 3
combined with a metal fluoride compound to suppress oxidation and control hole concentration
Data Source
AI summary
Disclosed are tin-based perovskite field effect transistor memory and a method for manufacturing the same. In detail, a perovskite comprises at least one selected from the group consisting of cesium (Cs), methylammonium (MA), and formamidinium (FA); a compound represented by the structural formula 1; at least one selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); and tin (Sn). The transistor memory of the present invention can be utilized as a p-type transistor or a memory device, and can be utilized as a device for in-memory processing.