Semiconductor Device TiN Resistive Element Integration
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Solution Overview
Problem
The manufacturing process for semiconductor devices with titanium nitride (TiN) resistive elements becomes complex and costly when TiN is used for both constant current generation circuits and barrier metals in separate steps, leading to reduced design flexibility and increased costs due to the difficulty in controlling the thickness of TiN films.
Innovation Solution
Forming the metal resistive element as the same layer as the conducting film over the uppermost metal wiring, allowing for easier control of thickness and integration into the manufacturing process, thereby simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TiN is used for both constant current generation circuits and barrier metals in separate steps, then the functionality is achieved, but the manufacturing process becomes complex and costly
Solution Approach 1:
The patent combines the formation of the TiN resistive element and the TiN barrier metal into a single simultaneous deposition step. This merging of operations reduces the total number of manufacturing steps while maintaining both functionalities, directly addressing the contradiction between achieving full functionality and reducing process complexity
Solution Approach 2:
The TiN layer is designed to serve multiple functions simultaneously: it acts as both the resistive element for constant current generation and as the barrier metal for wiring structures. This multi-functionality approach allows a single layer to fulfill multiple roles that were previously required separate layers, thereby simplifying the manufacturing process
2Reliability
If TiN is used for both constant current generation circuits and barrier metals in separate steps, then the functionality is achieved, but the manufacturing cost increases
Solution Approach 1:
By merging the formation of the TiN resistive element and the TiN barrier metal into a single deposition step, the patent reduces the total number of manufacturing operations. This consolidation directly lowers manufacturing costs by reducing equipment usage, processing time, and material waste associated with multiple separate deposition steps
3Reliability
If TiN is formed as barrier metal covering the lower surface of the electrode, then the barrier function is achieved, but the thickness control becomes difficult and design flexibility is lowered
Solution Approach 1:
Instead of forming the TiN barrier metal first and then adding the resistive element on top, the patent inverts the approach by simultaneously forming both functions in a single deposition step. This allows the resistive element to be formed as the upper surface of the same TiN layer that provides the barrier function, enabling precise thickness control through a single deposition process parameter
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances design flexibility and reduces the overall manufacturing process complexity and costs by integrating the metal resistive element with the conducting film, ensuring stable oscillating frequencies and accurate resistance values in semiconductor devices.
Implementation Method 1
One reason why TiN is adopted is that, because a so-called piezo-resistance effect is not generated in TiN, a variation in resistance values, occurring due to the stress resulting from a piezo-resistance effect, is small.
Data Source
AI summary
Provided are a semiconductor device including an oscillator and a manufacturing method thereof, in which cost is low and design flexibility is high. The semiconductor device includes a wiring structure region and an oscillator region. The semiconductor device also includes, in the oscillator region, a metal resistive element as the same layer as a conducting film over uppermost metal wiring in the wiring structure region.