TiN Spacer Layer in Magnetoresistive Element for MRAM
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Solution Overview
Problem
High-temperature annealing of the reference layer in spin transfer torque MRAMs causes diffusion of nonmagnetic materials into the first magnetic layer, leading to decreased magnetic anisotropy and crystallinity, which in turn reduces the magnetic resistance ratio (MR ratio).
Innovation Solution
Incorporating a TiN nonmagnetic layer between the first and second magnetic layers in the magnetoresistive element, which suppresses the diffusion of nonmagnetic materials during high-temperature annealing, thereby maintaining the crystallinity and enhancing the MR ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature annealing is applied to increase crystallinity and MR ratio, then the magnetic resistance ratio improves, but nonmagnetic materials diffuse into the first magnetic layer causing decreased magnetic anisotropy and crystallinity
Solution Approach 1:
A TiN nonmagnetic layer is introduced as an intermediary barrier between the first magnetic layer and the second magnetic layer containing nonmagnetic materials. This intermediate layer prevents diffusion of nonmagnetic materials into the first magnetic layer during high-temperature annealing, thereby maintaining magnetic anisotropy while allowing the MR ratio to be enhanced through proper crystallinity control
2Temperature
If high-temperature annealing is applied to enhance crystallinity, then the MR ratio increases, but material diffusion occurs reducing magnetic characteristics
Solution Approach 1:
The TiN nonmagnetic layer serves as a diffusion barrier that enables high-temperature annealing processes to be applied without causing harmful material diffusion. This intermediary layer allows the system to achieve high crystallinity in the first magnetic layer while maintaining stable magnetic characteristics by preventing contamination from the second magnetic layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of TiN as a spacer layer prevents material diffusion, allowing for high-temperature annealing that increases the crystallinity and MR ratio of the first magnetic layer, improving the magnetic characteristics of the MRAM.
Implementation Method 1
High-temperature annealing of the reference layer causes diffusion of nonmagnetic materials into the first magnetic layer
Implementation Method 2
high-temperature annealing that increases the crystallinity and MR ratio of the first magnetic layer
Implementation Method 3
A spin transfer torque MRAM (Magnetic Random Access Memory) including a magnetoresistive element containing a ferromagnetic material as a memory element has been proposed. This MRAM is a memory that stores information by controlling the electrical resistance of the magnetoresistive element in two states of a high-resistance state/low-resistance state by changing a magnetization direction in a magnetic layer by electric current to be injected into the magnetoresistive element.
Implementation Method 4
the magnetic resistance ratio (MR ratio). By contrast, the present embodiment solves the above problem by using TiN as the spacer layer. The present embodiment will be explained below with reference to the accompanying drawings.
Data Source
AI summary
According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.