TiN-X Intermediate Layer for FePt Grain Control

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Solution Overview

Problem

Current magnetic recording technologies face challenges in controlling the grain size and orientation of high anisotropy magnetic layers, such as FePt, which affects the areal density and thermal stability of magnetic recording media.

Innovation Solution

A TiN-X intermediate layer is introduced between the substrate and the magnetic recording layer, where X comprises dopants like MgO, TiO, TiO2, ZrN, ZrO, HfN, HfO, AlN, and Al2O3, to promote epitaxial growth, reduce grain size, and enhance thermal conductivity, while preventing interdiffusion and lattice mismatch.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional magnetic recording layers are used, then thermal stability is maintained, but grain size control and areal density are limited

Engineering Contradiction:
Improvegrain size controlVSAvoidareal density
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

A TiN-X intermediate layer is introduced between the substrate and the magnetic recording layer. This intermediate layer acts as a mediator that promotes epitaxial growth of the magnetic layer, reduces grain size through controlled nucleation, and improves thermal conductivity to enhance heat dissipation during writing operations, thereby enabling higher areal density while maintaining thermal stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the composition and properties of the intermediate layer by doping TiN with elements such as Mg, O, Ti, Zr, Hf, Al, etc., to create a TiN-X layer with optimized thermal conductivity, lattice structure, and surface energy. These parameter changes enable better control over magnetic layer growth and thermal behavior, resolving the contradiction between grain size control and areal density.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If magnetic recording layer thickness is increased, then thermal stability is improved, but grain size increases and areal density decreases

Engineering Contradiction:
Improvethermal stabilityVSAvoidgrain size
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The TiN-X intermediate layer serves as a thermal management intermediary that conducts heat away from the magnetic recording layer during write operations, preventing thermal runaway even when the magnetic layer is thick. Simultaneously, it provides a controlled nucleation surface that maintains fine grain size despite increased layer thickness, thus resolving the contradiction between thermal stability and grain size control.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

By changing the thermal conductivity parameter of the intermediate layer through doping with elements like Ti, Zr, Hf, and Al, the patent enables efficient heat dissipation from thicker magnetic layers without causing grain growth. The modified lattice structure and surface energy of the TiN-X layer also contribute to maintaining fine grain size while supporting thicker, more thermally stable magnetic layers.

Inventive Principle:
Principle #35Parameter changes

3Power

If thermal conductivity is increased, then heat dissipation is improved, but lattice mismatch and interdiffusion occur

Engineering Contradiction:
Improvethermal conductivityVSAvoidlattice structure
Core Design Contradiction:
PowerVSStability of the object's composition

Solution Approach 1:

The patent optimizes the thermal conductivity parameter of the intermediate layer by selecting specific dopants (Mg, O, Ti, Zr, Hf, Al) and their concentrations in the TiN-X layer. This controlled parameter change increases thermal conductivity to enhance heat dissipation while maintaining lattice structure stability through the careful selection of dopants that match the crystal structure of both TiN and the magnetic recording layer, preventing interdiffusion and lattice mismatch.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The TiN-X layer is a composite material combining TiN with dopant elements (MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, Al2O3). This composite structure provides enhanced thermal conductivity through the dopant elements while maintaining lattice compatibility through the TiN matrix, thus achieving both improved heat dissipation and structural stability without significant interdiffusion or lattice mismatch.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The TiN-X layer effectively reduces FePt grain size, improves grain isolation, and maintains magnetic properties, enhancing the areal density and thermal stability of magnetic recording media by modulating the surface energy and lattice structure.

Implementation Method 1

promote epitaxial growth

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 2

reduce grain size

Methodology Applied
Scientific EffectNucleation: Nucleation

Implementation Method 3

enhance thermal conductivity

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 4

preventing interdiffusion

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS9368142B2Magnetic stack including TiN-X intermediate layer
Publication Date: 2016.06.14 NATIONAL UNIVERSITY OF SINGAPORE
  • US9368142B2 patent drawing
  • US9368142B2 patent drawing
  • US9368142B2 patent drawing

AI summary

A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.