TiO2 Dielectric Layer Thickness Control via TiCl4 Partial Pressure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing technologies for forming contacts in semiconductor devices struggle to finely adjust the resistance-capacitance (RC) delay, which is critical for DRAM devices, due to limitations in controlling the thickness of dielectric layers like TiO2.
Innovation Solution
A method is developed to adjust the thickness of the TiO2 dielectric layer by controlling the partial pressure of TiCl4 during the plasma enhanced chemical vapor deposition (PECVD) process, allowing for precise tuning of the RC delay.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the TiO2 dielectric layer is increased to reduce RC delay, then the RC delay is reduced, but the manufacturing precision of the layer thickness becomes difficult to control
Solution Approach 1:
The patent applies parameter changes by adjusting the partial pressure of TiCl4 source gas during PECVD to precisely control the thickness of the TiO2 dielectric layer. By changing the gas pressure parameter, the deposition rate and final layer thickness are controlled within a specific range, enabling fine-tuning of RC delay while maintaining manufacturing precision.
Solution Approach 2:
The patent implements dynamics by making the dielectric layer thickness adjustable and controllable during the deposition process. The thickness is not fixed but can be dynamically adjusted by controlling the TiCl4 partial pressure, allowing optimization of RC delay characteristics while maintaining precision through process control.
2Manufacturing precision
If the TiO2 layer thickness is precisely controlled by adjusting TiCl4 partial pressure, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent uses parameter changes to simplify the process by controlling only the partial pressure of TiCl4 during PECVD. This single parameter adjustment achieves precise thickness control without requiring complex multi-step processes or additional equipment, thereby improving manufacturing precision while minimizing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the adjustment of the TiO2 layer thickness within a specific range, effectively minimizing RC delay and enhancing the reliability of semiconductor devices.
Implementation Method 1
subjecting a surface of the silicon oxide film to plasma nitrification treatment
Implementation Method 2
supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment; and forming a barrier layer by igniting a plasma using the source gas
Data Source
AI summary
A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.