TiON Electrode Composition for Heat-Resistant Organic Photoconversion

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Solution Overview

Problem

Existing photoelectric conversion elements face challenges in enhancing heat resistance of organic material-containing light receiving layers due to high-temperature processing steps, limiting material selection and performance enhancement.

Innovation Solution

The use of titanium oxynitride (TiON) electrodes with specific oxygen and nitrogen ratios, either through sputtering or CVD, followed by controlled heating to prevent gas incorporation and maintain electrode integrity during subsequent high-temperature processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a high-temperature heating step is performed to enhance heat resistance of the light receiving layer, then the heat resistance is improved, but the light receiving layer undergoes denaturation and performance deteriorates

Engineering Contradiction:
Improveheat resistanceVSAvoidlight receiving layer integrity
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The pixel electrode is heated at 270°C or higher before forming the light receiving layer to prevent gas incorporation and enhance heat resistance. This preliminary heating action prepares the electrode in advance to withstand subsequent high-temperature processing steps without causing denaturation of the light receiving layer.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the physical parameter of the pixel electrode by controlling its composition (oxygen and nitrogen ratios) through sputtering or CVD, followed by thermal treatment at 270°C or higher. This parameter change enhances the electrode's heat resistance properties, enabling it to protect the light receiving layer during subsequent high-temperature manufacturing steps.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the light receiving layer material is selected to have high glass transition temperature for heat resistance, then the heat resistance is improved, but the material selection range is narrowed and photoelectric conversion efficiency may be compromised

Engineering Contradiction:
Improveheat resistanceVSAvoidmaterial selection flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

Instead of selecting special high-Tg materials for the light receiving layer, the invention performs preliminary heating of the pixel electrode before light receiving layer formation. This preliminary action enhances the electrode's heat resistance, allowing the use of conventional organic materials with lower glass transition temperatures while still achieving the required heat resistance for withstanding subsequent high-temperature processing.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The pixel electrode acts as an intermediary protective layer between the substrate and the light receiving layer. By enhancing the electrode's heat resistance through preliminary heating and composition control, it serves as a thermal buffer that protects the light receiving layer during subsequent high-temperature processing steps, thereby enabling the use of materials with lower glass transition temperatures.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If conventional silicon device manufacturing processes are used, then manufacturing precision is maintained, but high-temperature heating steps cause denaturation of the organic light receiving layer

Engineering Contradiction:
Improveprocess control accuracyVSAvoidlight receiving layer stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The invention introduces a preliminary heating step at 270°C or higher before light receiving layer formation to enhance the electrode's heat resistance. This preliminary action modifies the electrode properties in advance, enabling it to withstand the high-temperature heating steps inherent in conventional manufacturing processes without causing denaturation of the subsequent light receiving layer.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the physical and chemical parameters of the pixel electrode through controlled sputtering or CVD followed by thermal treatment. These parameter changes enhance the electrode's thermal stability, allowing conventional high-temperature manufacturing processes to be used while protecting the organic light receiving layer from denaturation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the heat resistance of the photoelectric conversion elements, maintaining performance by preventing denaturation of the light receiving layer during high-temperature manufacturing steps.

Implementation Method 1

controlled heating to prevent gas incorporation and maintain electrode integrity during subsequent high-temperature processes

Methodology Applied
Scientific EffectThermal diffusion: Diffusion

Implementation Method 2

either through sputtering or CVD

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentEP2434557B1Photoelectric conversion element, solid-state imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
Publication Date: 2025.07.02 FUJIFILM CORP
  • EP2434557B1 patent drawingFigure 1
  • EP2434557B1 patent drawingFigure 2
  • EP2434557B1 patent drawing

AI summary

A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm% or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to 2/3 of the thickness of the first electrode, an amount of oxygen is 40 atm% or more of an amount of titanium.