TiSiON Barrier Layer for Metal Diffusion Control
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Solution Overview
Problem
The challenge in semiconductor devices using high-k dielectric materials is the diffusion of n-type or p-type metal, which can lead to Time Dependent Dielectric Breakdown (TDDB), requiring effective barrier layers to prevent such diffusion and ensure smaller, more reliable, and efficient devices.
Innovation Solution
A cap barrier layer comprising annealed silicon and titanium nitride is used to prevent the diffusion of n-type or p-type metal, formed through specific deposition and annealing processes, enhancing the lifespan and performance of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If barrier layers are used to prevent diffusion of metal toward high-k dielectric, then reliability is improved, but device size is increased
Solution Approach 1:
The patent changes the material composition parameters of the barrier layer by incorporating titanium silicon oxynitride (TiSiON) with specific ratios of titanium, silicon, oxygen, and nitrogen. This compositional parameter change enables effective metal diffusion prevention while maintaining thinner layer dimensions, thus improving reliability without proportionally increasing device size.
Solution Approach 2:
The patent employs a composite barrier layer structure combining titanium nitride (TiN) and silicon oxide (SiO2) or silicon oxynitride (SiON) materials. This composite approach creates a multi-functional barrier that prevents metal diffusion toward the high-k dielectric while allowing for optimized thickness control, thereby achieving reliable protection without excessive size increase.
2Length of moving object
If thinner barrier layers are used, then device size is reduced, but diffusion prevention capability is worsened
Solution Approach 1:
The patent optimizes the thickness and compositional parameters of the TiSiON barrier layer to achieve effective diffusion prevention at reduced thickness. By controlling the titanium, silicon, oxygen, and nitrogen ratios and the overall layer thickness, the barrier maintains its diffusion-blocking capability while enabling smaller device dimensions.
Solution Approach 2:
The patent replaces traditional thick single-material barrier structures with a thinner composite TiSiON barrier layer. This substitution achieves comparable or superior diffusion prevention performance at reduced thickness through the synergistic effects of the composite material composition, effectively substituting the conventional barrier design approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of annealed silicon in the titanium nitride cap barrier layer effectively inhibits metal diffusion, thereby increasing the reliability and efficiency of semiconductor devices by preventing TDDB, allowing for the fabrication of smaller, faster, and more power-efficient devices.
Implementation Method 1
Barrier layers are used to prevent diffusion of the n-type or p-type metal toward the high-k dielectric materials
Implementation Method 2
A cap barrier layer comprising annealed silicon and titanium nitride is used to prevent the diffusion of n-type or p-type metal, formed through specific deposition and annealing processes
Data Source
AI summary
A method of making a semiconductor device includes forming a titanium nitride layer over a gate dielectric layer. The method further includes performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer. The method further includes driving silicon from the at least one silicon monolayer into the titanium nitride layer to form a TiSiON layer.