TiCN Barrier Layer via PEALD for Diffusion Control
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Solution Overview
Problem
Current TiN barrier layers in electronic components suffer from defects that allow significant diffusion of oxygen or copper, due to their columnar structure, which compromises their effectiveness as diffusion barriers.
Innovation Solution
A TiCN barrier layer is introduced, deposited using plasma-enhanced atomic layer deposition with a hydrogen-rich gas, achieving a resistivity comparable to or lower than TiN, with high crystallization and low oxygen content, thereby improving the diffusion barrier performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TiN barrier layer is deposited using conventional methods, then the layer provides basic barrier function, but significant diffusion of oxygen or copper occurs through the layer due to columnar structure
Solution Approach 1:
The patent changes the chemical composition parameters by introducing carbon to form TiCN compound, and changes the physical structure by achieving high crystallization through plasma-enhanced atomic layer deposition with hydrogen-rich gas, thereby eliminating the columnar structure defects that cause diffusion
Solution Approach 2:
The patent uses a composite TiCN material combining titanium, carbon, and nitrogen elements, deposited with controlled hydrogen plasma treatment, creating a composite structure that provides superior barrier properties compared to conventional TiN layers
2Reliability
If TiN layer is used as electrode in MIM capacitors, then low resistivity is achieved, but the columnar structure still allows significant diffusion
Solution Approach 1:
The patent changes the structural parameters by achieving high crystallization through plasma-enhanced atomic layer deposition with hydrogen-rich gas, transforming the columnar structure into a dense, well-crystallized structure that prevents diffusion while maintaining low resistivity
Solution Approach 2:
The patent improves the local quality of the barrier layer by ensuring high crystallization and low oxygen content throughout the TiCN layer, creating uniform dense structure that effectively blocks diffusion paths at all locations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TiCN barrier layer exhibits reduced resistivity and enhanced crystallization, effectively preventing oxygen and copper diffusion, making it a superior alternative to traditional TiN layers, suitable for various electronic components including transistors and capacitors.
Implementation Method 1
contacting the substrate with plasma by plasma-enhanced atomic layer deposition (PEALD)
Implementation Method 2
the plasma comprises a hydrogen-rich gas having at most 5 atomic % nitrogen and at least 95 atomic % hydrogen
Data Source
AI summary
An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis(dimethylamido)titanium and/or tetrakis(diethylamido)titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.