Selective Titanium Deposition via Hydrogen Activation
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Solution Overview
Problem
Current methods face challenges in selectively depositing titanium only on semiconductor regions while avoiding insulative regions and in achieving uniform titanium deposition across surfaces of differing compositions in integrated circuit fabrication.
Innovation Solution
A 2-step or 3-step process involving hydrogen activation of semiconductor surfaces, followed by the introduction of titanium-containing and hydrogen-containing materials into a reaction chamber, either sequentially or simultaneously, to form titanium films selectively or uniformly across semiconductor and insulative surfaces using techniques like atomic layer deposition (ALD) or chemical vapor deposition (CVD).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional titanium deposition methods are used, then titanium can be deposited on semiconductor regions, but titanium also deposits on insulative regions where it is not desired
Solution Approach 1:
The patent applies preliminary action by performing hydrogen activation of the semiconductor surface before titanium deposition. This pre-treatment modifies the semiconductor surface to enhance titanium deposition selectivity, allowing titanium to preferentially deposit on semiconductor regions while avoiding insulative regions. The hydrogen activation creates surface conditions that facilitate selective titanium deposition in subsequent processing steps.
Solution Approach 2:
The patent implements local quality by creating different surface conditions on semiconductor versus insulative regions through hydrogen activation. The semiconductor surfaces receive hydrogen treatment that makes them reactive to titanium deposition, while insulative surfaces maintain their original properties. This results in spatially varying deposition characteristics where titanium deposits selectively on semiconductor regions with the desired local properties.
2Area of stationary object
If titanium deposition is performed across diverse surfaces, then coverage can be achieved, but uniformity of titanium-containing films is difficult to achieve
Solution Approach 1:
The patent applies parameter changes by modifying the chemical state of surface atoms through hydrogen activation before titanium deposition. This changes the reactivity parameters of semiconductor surfaces, creating optimal conditions for uniform titanium deposition. By adjusting surface chemistry parameters through hydrogen treatment, the process achieves consistent titanium film formation across diverse surface compositions including both semiconductor and insulative regions.
Solution Approach 2:
The patent uses hydrogen as an intermediary substance that mediates between the deposition process and diverse surface compositions. Hydrogen activation serves as an intermediate step that prepares surfaces for uniform titanium deposition. This intermediary treatment creates consistent surface conditions that enable uniform titanium-containing film formation across semiconductor and insulative regions with different compositions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enables precise and uniform titanium deposition, ensuring titanium silicide formation on semiconductor surfaces without depositing titanium on insulative surfaces, improving the uniformity and selectivity of titanium-containing layers, which is crucial for integrated circuit fabrication.
Implementation Method 1
hydrogen activation of semiconductor surfaces
Implementation Method 2
chemical vapor deposition (CVD)
Implementation Method 3
reacting the titanium with the silicon to form titanium silicide
Data Source
AI summary
Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium silicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.