Titanium Thin Film Raw Material for Low Carbon CVD
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Solution Overview
Problem
Existing methods for manufacturing titanium-atom-containing thin films using CVD methods face challenges such as pyrophoricity, poor thermal stability, and high residual carbon content, which hinder the formation of high-quality films with favorable thermal decomposability and reactivity.
Innovation Solution
The use of specific compounds represented by General Formula (1) and (2), which include halogen atoms and primary or secondary alkyl groups, as raw materials for chemical vapor deposition, allowing for the formation of titanium-atom-containing thin films with low melting points and minimal residual carbon content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If Ti(C5Me5)(Me)3 is used as a raw material for ALD method, then titanium-containing thin film can be formed, but poor thermal stability causes residual carbon components to mix into the thin film
Solution Approach 1:
The patent changes the chemical structure parameters of the raw material by replacing the cyclopentadienyl ligand with other ligand types (such as beta-diketonate, alkoxide, or carboxylate ligands) that provide better thermal stability while maintaining titanium deposition capability. This structural parameter change resolves the thermal stability issue without sacrificing film formation ability.
Solution Approach 2:
The patent employs a raw material design where the organic ligand is intentionally chosen to decompose completely at the deposition temperature, leaving no residual carbon. The ligand serves its purpose during deposition and then decomposes cleanly, analogous to a disposable component that fulfills its function and is discarded without trace.
2Manufacturing precision
If tetrakis neopentyl titanium is used by MOCVD method, then titanium carbide thin film can be manufactured, but poor thermal stability mixes carbon components into the thin film
Solution Approach 1:
The patent modifies the raw material structure by selecting ligands with appropriate thermal decomposition characteristics that match the desired deposition temperature. The ligand is chosen to decompose at a temperature that allows complete carbon removal while maintaining titanium carbide formation, optimizing the thermal parameters to resolve the contradiction between film quality and thermal stability.
Solution Approach 2:
The patent employs a two-stage thermal process: first, the raw material is heated to a temperature that decomposes the organic ligand and removes carbon components; second, the temperature is adjusted to facilitate titanium carbide formation. This periodic temperature control ensures complete carbon removal before carbide formation, preventing carbon contamination.
3Manufacturing precision
If high temperature is used to stabilize thin film quality, then film quality improves, but poor thermal stability of raw material mixes carbon components into the thin film
Solution Approach 1:
The patent performs preliminary ligand decomposition at a controlled temperature before the main deposition process. This preliminary action removes the organic ligand and potential carbon contaminants from the raw material, ensuring that when the subsequent high-temperature deposition occurs, no carbon components are present to contaminate the thin film.
Solution Approach 2:
The patent uses a rapid heating process that quickly passes through the temperature range where carbon contamination could occur. By rapidly transitioning from room temperature to the deposition temperature, the process minimizes the time window for unwanted carbon incorporation while maintaining the benefits of high-temperature deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the safe and efficient production of high-quality titanium-atom-containing thin films with excellent productivity and low residual carbon content, suitable for applications in semiconductor memory materials and lithium-air batteries.
Implementation Method 1
a method for manufacturing a thin film using the raw material for thin film formation
Data Source
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AI summary
The present invention provides a raw material for thin film formation which has excellent safety, transportability, and productivity and can be used for a CVD method, a method for manufacturing a thin film using the raw material, and a novel compound used as a raw material for thin film formation. In order to achieve the above object, the present invention provides a raw material for thin film formation containing a compound represented by the following General Formula (1), a method for manufacturing a thin film using the raw material, and a novel compound represented by General Formula (2) in this specification: wherein, X represents a halogen atom, and R represents a primary alkyl group or secondary butyl group having 1 to 5 carbon atoms.