Titanium Getter Structure for Gyroscope Vacuum Stability

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Solution Overview

Problem

Semiconductor devices, particularly those with motion sensors like gyroscopes, face challenges in maintaining a stable vacuum environment due to outgassing, which affects the performance and stability of these sensors.

Innovation Solution

Incorporating a getter structure comprising titanium within the semiconductor device to react with and remove gases in the vacuum-sealed space, thereby reducing outgassing and maintaining a stable vacuum, improving the performance and stability of the gyroscope.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a vacuum-sealed space is created for the gyroscope, then the gyroscope performance is improved, but outgassing occurs which degrades the vacuum stability

Engineering Contradiction:
Improvegyroscope performanceVSAvoidvacuum stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

A getter structure is introduced as an intermediary substance within the vacuum-sealed space. This getter structure actively absorbs and removes outgassed molecules, mediating between the vacuum environment and the outgassing sources, thereby maintaining vacuum stability without compromising gyroscope performance

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The getter structure operates autonomously to maintain vacuum conditions. It continuously absorbs outgassing products without requiring external intervention or control systems, enabling the vacuum-sealed space to self-regulate its internal atmosphere and maintain stability over time

Inventive Principle:
Principle #25Self-service

2Stability of the object's composition

If the vacuum-sealed space is sealed tightly, then vacuum stability is improved, but outgassing accumulates which harms the vacuum environment

Engineering Contradiction:
Improvevacuum stabilityVSAvoidoutgassing
Core Design Contradiction:
Stability of the object's compositionVSObject-generated harmful factors

Solution Approach 1:

The getter structure transforms the harmful outgassing byproducts into beneficial effects. By chemically absorbing the outgassed molecules, the getter converts what would be vacuum-degrading contaminants into stable compounds, effectively turning the harmful outgassing process into a beneficial vacuum-maintenance mechanism

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The getter structure changes the chemical composition parameters within the vacuum-sealed space. It selectively absorbs specific gas molecules, altering the partial pressures and composition ratios of different gases, thereby transforming the harmful outgassing mixture into a cleaner vacuum environment with controlled parameters

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a titanium-based getter structure significantly reduces outgassing, enhancing the stability and performance of the vacuum environment in semiconductor devices with motion sensors like gyroscopes.

Implementation Method 1

Incorporating a getter structure comprising titanium within the semiconductor device to react with and remove gases in the vacuum-sealed space

Methodology Applied
Scientific EffectGettering: Gettering

Implementation Method 2

the getter structure comprises titanium... to react with and remove gases

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS20240409395A1Semiconductor device and method of making
Publication Date: 2024.12.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240409395A1 patent drawing
  • US20240409395A1 patent drawing
  • US20240409395A1 patent drawing

AI summary

A semiconductor device is provided. The semiconductor device includes a metal layer. The semiconductor includes a gyroscope including a getter structure overlying the metal layer, wherein the getter structure comprises titanium.