Cleaning Composition for Titanium Nitride Corrosion Suppression
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Solution Overview
Problem
Current cleaning processes for microelectronic devices, such as SC-1, are incompatible with titanium nitride (TiN) surfaces, leading to corrosion and residue removal challenges in microelectronics manufacturing.
Innovation Solution
A cleaning composition comprising an amine, an oxidizing agent, water, and a borate species, particularly ammonium tetraborate tetrahydrate, is used to effectively remove residues from microelectronic devices without damaging titanium nitride surfaces, allowing for the simultaneous cleaning of TiN and low-k dielectric materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If SC-1 cleaning solution is used to remove residue from microelectronic devices, then cleaning effectiveness is improved, but titanium nitride corrosion increases
Solution Approach 1:
The patent modifies the chemical composition parameters of the cleaning solution by replacing hydrogen peroxide with alternative oxidizing agents (such as ammonium persulfate, sodium persulfate, or potassium permanganate) and adjusting the pH level to a neutral or slightly alkaline range (pH 7-10). This parameter change maintains the cleaning effectiveness while eliminating the aggressive attack on titanium nitride that occurs with hydrogen peroxide-containing solutions.
Solution Approach 2:
The patent introduces a protective coating layer as an intermediary between the cleaning solution and the titanium nitride surface. This coating acts as a barrier that prevents direct contact between the cleaning agents and the titanium nitride, allowing effective residue removal while protecting the underlying TiN layer from corrosion.
2Reliability
If hydrogen peroxide is added to cleaning solution to protect silicon surface, then silicon protection is improved, but titanium nitride compatibility deteriorates
Solution Approach 1:
The patent changes the oxidizing agent parameter from hydrogen peroxide to alternative oxidizers that are gentler on titanium nitride. The solution maintains appropriate oxidizing capability for silicon protection through agents like ammonium persulfate or sodium persulfate, which provide sufficient oxidation potential without the aggressive corrosion of hydrogen peroxide on TiN surfaces.
Solution Approach 2:
The patent applies different protective mechanisms to different materials: a protective oxide layer for silicon surfaces and a protective coating layer for titanium nitride surfaces. This local quality approach allows each material to be protected by the most suitable mechanism, with silicon benefiting from oxide formation and TiN benefiting from physical barrier protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves significant reduction in TiN loss and effective removal of residues, maintaining compatibility with TiN and low-k dielectric materials, ensuring high purity and integrity of microelectronic devices.
Implementation Method 1
the borate compound being either added or generated in situ
Implementation Method 2
at least one oxidizing agent
Data Source
AI summary
Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.