Titanium Nitride Contact Tracks for OLED Encapsulation
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Solution Overview
Problem
Existing encapsulation techniques for electronic components, particularly opto-electronic components like OLEDs, fail to preserve electrical contact tracks due to the non-localized deposition of encapsulation layers, leading to coverage and mechanical instability.
Innovation Solution
A method involving the deposition of a titanium nitride layer directly on the electrical contact tracks, followed by an encapsulation layer, allowing for direct electrical contact through the titanium nitride and encapsulation layer, eliminating the need for complex masking or ablation steps and ensuring mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD deposition is used to form the encapsulation layer, then the integrity of fragile organic components is preserved, but the electrical contact tracks are covered by the encapsulation layer
Solution Approach 1:
The encapsulation process is segmented into two distinct deposition steps: first depositing the encapsulation layer over the entire substrate including contact tracks, then performing a localized ablation step only on the contact track regions to remove the encapsulation material and restore electrical conductivity. This segmentation allows the bulk component to remain protected while selectively exposing the contact areas.
Solution Approach 2:
An intermediary layer or treatment is introduced between the encapsulation layer and the contact tracks. The patent uses a specific deposition technique that creates a differentiated structure where the encapsulation material on contact tracks has different properties (e.g., thickness, composition, or adhesion) compared to areas over the component, enabling selective removal or penetration to restore electrical contact.
2Object-generated harmful factors
If localized deposition techniques are used to preserve electrical contact tracks, then the contact tracks remain uncovered, but the component integrity may be compromised
Solution Approach 1:
The patent replaces mechanical or physical localized deposition techniques (such as shadow masking or focused beam deposition) with a chemical vapor deposition approach followed by selective ablation. This substitution allows for more uniform and controlled deposition that protects the component, while the subsequent ablation step precisely removes material only where needed without mechanically contacting or damaging the fragile organic structures.
3Reliability
If the encapsulation layer is deposited entirely over the substrate, then hermetic sealing is achieved, but electrical connection becomes impossible
Solution Approach 1:
The patent applies local quality by creating spatial variation in the encapsulation layer properties. Through controlled deposition and selective ablation, the encapsulation layer is removed or thinned only in specific locations corresponding to the electrical contact tracks, while maintaining full coverage and hermetic sealing over the rest of the component. This local modification enables electrical connection through the encapsulated structure without compromising overall sealing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables simple and effective electrical connection of encapsulated components with minimal steps, maintaining mechanical stability and protecting against environmental attacks, while allowing for localized deposition without damaging the components.
Implementation Method 1
The deposition of the titanium nitride layer on at least part of the electrical contact track is carried out by physical vapor deposition
Implementation Method 2
the encapsulation layer is deposited in particular on the titanium nitride layer... This is particularly the case during a chemical vapor deposition called CVD deposition
Data Source
Figure 1~2
Figure 3~4
AI summary
The method involves depositing an aluminum oxide encapsulation layer (4) by atomic layer deposition, and directly depositing a titanium nitride layer (102) on a part of an electrical contact track (101). The encapsulation layer is deposited such that the encapsulation layer directly covers the titanium nitride layer, where the titanium nitride layer is deposited on the part of the electrical contact track by physical vapor deposition when manufacturing an electronic component (2). An independent claim is also included for an electronic device.