Titanium Nitride Film (200) Texture via Plasma Treatment
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Solution Overview
Problem
Current methods for depositing titanium nitride (TiN) thin films in quantum computing applications lack the ability to consistently achieve predominantly (200) crystallographic texture, which is essential for superconducting and workfunction tuning applications.
Innovation Solution
A substrate processing method involving vapor phase deposition of titanium nitride films followed by treatment with plasma excited hydrogen-containing gas to increase the (200) crystallographic texture, with additional cycles of deposition and treatment to enhance the texture and shift the threshold voltage effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If reactive sputtering is used to deposit TiN thin films, then the films can be formed for low loss quantum circuits, but the films lack predominantly (200) crystallographic texture required for superconducting applications
Solution Approach 1:
The patent changes the deposition parameters by using atomic layer deposition (ALD) instead of reactive sputtering, and introduces plasma treatment with hydrogen-containing gas to modify the crystallographic structure. These parameter changes transform the film texture from non-preferred orientations to predominantly (200) orientation, enabling superconducting applications while maintaining low loss properties
Solution Approach 2:
The patent creates a composite process combining ALD deposition with plasma treatment using hydrogen-containing gas. This composite approach produces TiN films with enhanced (200) texture that exhibit both low loss characteristics and superconducting properties, resolving the contradiction between reliability and manufacturing precision
2Manufacturing precision
If multiple cycles of deposition and plasma treatment are performed, then the (200) crystallographic texture is enhanced and threshold voltage is shifted, but the processing time and complexity increase
Solution Approach 1:
The patent employs periodic action by repeating cycles of ALD deposition followed by plasma treatment with hydrogen-containing gas. Each cycle enhances the (200) crystallographic texture and contributes to threshold voltage shifting. The periodic repetition of these controlled steps achieves the desired film properties while maintaining systematic process control
Solution Approach 2:
The plasma treatment with hydrogen-containing gas is performed as a preliminary action between deposition cycles to prepare the film surface and enhance crystallographic texture before subsequent deposition steps. This preliminary treatment ensures that each subsequent layer builds upon an optimally prepared surface, accumulating the desired (200) texture efficiently
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method successfully forms TiN films with predominantly (200) crystallographic texture, suitable for superconducting applications, and positively shifts the threshold voltage by 0.2V to 0.4V, enabling their use in workfunction tuning applications such as gate electrodes in transistors.
Implementation Method 1
depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate
Implementation Method 2
treating the first titanium nitride film with plasma excited hydrogen-containing gas
Implementation Method 3
the treating increases the (200) crystallographic texture of the first titanium nitride film
Data Source
AI summary
A substrate processing method is described for forming a titanium nitride material that may be used for superconducting metallization or work function adjustment applications. The substrate processing method includes depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate, and treating the first titanium nitride film with plasma excited hydrogen-containing gas, where the first titanium nitride film is polycrystalline and the treating increases the (200) crystallographic texture of the first titanium nitride film. The method further includes depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.