Titanium Nitride Multilayer Deposition for Flat Narrow-Groove Films

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Solution Overview

Problem

The challenge of forming a sufficiently flat film, particularly in narrow grooves of three-dimensional structures like DRAM or NAND flash memory, is hindered by non-flat titanium nitride films, which can lead to increased resistance in tungsten films.

Innovation Solution

A method involving the sequential supply of metal-containing, reducing, and reactive gases into a reaction vessel to form a metal-containing multi-layer film structure, including steps to flatten the titanium nitride film surface by forming crystal layer separation films and removing abnormal growth nuclei.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a titanium nitride film is formed in a narrow groove to serve as a barrier film, then the adhesion between the tungsten film and insulating film is improved, but the film surface becomes non-flat, causing the tungsten film volume to decrease and resistance to increase

Engineering Contradiction:
Improveadhesion between tungsten film and insulating filmVSAvoidflatness of titanium nitride film surface
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent divides the film formation process into multiple sequential steps: first forming a titanium-containing film, then performing multiple alternating cycles of reducing gas supply and reactive gas supply. Each cycle creates a thin layer that contributes to flattening the surface while maintaining the barrier function. This segmented approach allows gradual surface refinement without compromising the underlying adhesion properties.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs periodic alternating supply of reducing gas and reactive gas in multiple cycles. The reducing gas step forms a metal-containing film, while the reactive gas step forms a compound film on its surface. This periodic action repeatedly builds and modifies thin layers, progressively flattening the titanium nitride film surface while maintaining its barrier functionality and adhesion properties.

Inventive Principle:
Principle #19Periodic action

2Productivity

If the embedding width of the groove is reduced to increase device density, then the three-dimensional structure capability is improved, but the titanium nitride film cannot be formed flat in the narrow groove, leading to increased tungsten film resistance

Engineering Contradiction:
Improvedevice densityVSAvoidflatness of film in narrow groove
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies different gas supply conditions and process parameters specifically tailored for narrow groove structures. The multiple alternating cycles of reducing and reactive gas supply create locally optimized film deposition that adapts to the confined geometry, ensuring flat surface formation even in extremely narrow embeddings where conventional single-step processes would fail.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs preliminary surface preparation by forming a titanium-containing film first, then systematically building up and refining the surface through multiple reducing and reactive gas cycles before final tungsten deposition. This preliminary multi-step action ensures the surface is adequately flattened and prepared, creating a stable foundation for subsequent low-resistance tungsten film formation in narrow grooves.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in a sufficiently flat titanium nitride film with reduced resistance, enhancing the quality of subsequent tungsten films in three-dimensional semiconductor devices.

Implementation Method 1

supplying a material gas containing metal and halogen into the reaction vessel; supplying a reducing gas into the reaction vessel while performing (a1)

Methodology Applied
Scientific EffectChemical reduction: Reduction

Implementation Method 2

supplying a reactive gas into the reaction vessel; forming a first film on a surface of the metal-containing film

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 3

forming a metal-containing multi-layer film structure in the reaction vessel by performing (a) and (b) a predetermined number of times

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS20250218784A1Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Publication Date: 2025.07.03 KOKUSAI DENKI KK
  • US20250218784A1 patent drawing
  • US20250218784A1 patent drawing
  • US20250218784A1 patent drawing

AI summary

There is provided a technique capable of forming a sufficiently flat film. According to one aspect of the technique, there is provided a processing method including: (a) forming a metal-containing film in a reaction vessel by performing, a predetermined number of times: (a1) supplying a material gas containing metal and halogen into the reaction vessel, (a2) supplying a reducing gas into the reaction vessel while performing (a1), and (a3) supplying a reactive gas into the reaction vessel; (b) supplying a process gas into the reaction vessel so as to perform: (b-1) forming a first film on a surface of the metal-containing film; and (c) forming a metal-containing multi-layer film structure in the reaction vessel by performing (a) and (b) a predetermined number of times.