Titanium Oxide Capacitor Fabrication via TiN Oxidation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for integrating high-capacitance capacitors in semiconductor components are limited by low dielectric constants, size restrictions, and reliability issues, resulting in capacitors with low capacitance values and increased complexity and cost, necessitating a cost-effective method for achieving higher capacitance values within standard integrated circuit processes.
Innovation Solution
The method involves forming a structure with titanium oxide dielectric sandwiched between two lateral metal layers, where a thin titanium nitride (TiN) compound is oxidized to create a high dielectric constant titanium oxide, allowing for the fabrication of higher value capacitors with minimal additional process steps, effectively increasing capacitance per unit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard silicon dioxide dielectric is used, then the manufacturing process is simple, but the capacitance value is limited to pico-Farad or smaller
Solution Approach 1:
The patent changes the dielectric material parameter from standard silicon dioxide (k=3.9) to titanium oxide (k>80), achieving a 4-30x increase in capacitance per unit area while maintaining compatibility with standard semiconductor manufacturing processes
Solution Approach 2:
The patent uses a composite structure combining titanium nitride (TiN) as the base material with oxidized titanium oxide (TiOx) as the dielectric layer, creating a material system that provides both high dielectric constant and manufacturing compatibility
2Quantity of substance
If the dielectric layer is thinned to increase capacitance, then capacitance per unit area increases, but voltage breakdown characteristics deteriorate
Solution Approach 1:
The patent changes the dielectric material from silicon oxide to titanium oxide, which has a significantly higher dielectric constant (k>80). This allows achieving high capacitance per unit area with a thicker dielectric layer, thereby maintaining voltage breakdown characteristics while increasing capacitance
3Quantity of substance
If the capacitor area is enlarged to increase total capacitance, then capacitance value increases, but photomask defect density creates pinholes in the dielectric layer
Solution Approach 1:
The patent changes the dielectric material to titanium oxide with k>80, achieving a 4-30x increase in capacitance per unit area. This allows achieving high total capacitance values (4-30x greater than standard technology) with smaller capacitor areas, thereby avoiding photomask defect-induced pinholes
4Object-generated harmful factors
If thick inter-layer dielectric and low-k dielectric films are used to reduce parasitic capacitances, then parasitic capacitance decreases, but maximum capacitance per unit area is reduced
Solution Approach 1:
The patent applies local quality by using titanium oxide dielectric specifically in the capacitor region where high capacitance is needed, while maintaining standard low-k dielectric materials in interconnect regions where parasitic capacitance reduction is needed. This localized approach allows both high capacitor capacitance and low parasitic capacitance to coexist
Solution Approach 2:
The patent changes the dielectric material parameter to titanium oxide (k>80) specifically for the capacitor dielectric layer, enabling high capacitance per unit area (4-30x greater than standard) while allowing the use of standard low-k materials elsewhere to maintain low parasitic capacitance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in capacitors with capacitance values four to thirty times greater than standard silicon dioxide technology, providing a cost-effective and efficient integration of high-value capacitors within existing wafer processes, applicable to both integrated circuits and discrete components.
Implementation Method 1
a thin titanium nitride (TiN) compound is oxidized to create a high dielectric constant titanium oxide
Data Source
AI summary
A high value capacitance per unit area capacitor is fabricated on a substrate 1 by converting a portion of a primary function anti-reflecting conducting layer 36 to a high value dielectric layer 37 by partially oxidizing the conducting layer to form the dielectric layer. The resultant combination is sandwiched between two metal layer electrodes 35 and 55 to complete the capacitor structure.