Titanium Oxide Active Layer Thin Film Transistors
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Solution Overview
Problem
Existing thin film transistors, particularly organic and amorphous silicon transistors, face limitations in charge mobility, current driving capability, and environmental stability, while metal-oxide transistors require expensive materials, making them costly for applications like RFID tags and flexible displays.
Innovation Solution
The use of polycrystalline or amorphous titanium oxides as an active layer in thin film transistors, formed through methods like spin coating and chemical vapor deposition, to create a cost-effective, environmentally friendly, and high-performance transistor with improved charge mobility and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If expensive metals like indium, tin, gallium are added to metal-oxide semiconductors to achieve high charge mobility, then charge mobility is improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent replaces expensive metal additives (indium, tin, gallium) with cheap titanium oxide that can be easily deposited as a thin film. Titanium oxide is abundant, inexpensive, and can be formed into functional active layers without requiring rare or costly metal elements, thus achieving high charge mobility at low manufacturing cost
Solution Approach 2:
The patent changes the material composition parameter from metal-doped oxides to pure titanium oxide, and controls the oxidation state parameter (Ti4+, Ti3+, Ti2+) to optimize charge mobility. By adjusting the oxidation state and forming titanium oxide thin films through controlled deposition, the patent achieves high charge mobility without expensive metal additives
2Strength
If organic semiconductors are used in thin film transistors to achieve mechanical flexibility, then flexibility is improved, but charge mobility remains limited
Solution Approach 1:
The patent uses titanium oxide, which combines the advantages of inorganic materials (high charge mobility) with the ability to form thin, flexible films. Titanium oxide exhibits both high charge mobility comparable to silicon and the mechanical flexibility needed for flexible displays, overcoming the limitations of purely organic semiconductors
3Power
If the ratio of width to length in channel is increased to improve current driving capability, then current driving capability is improved, but aperture ratio decreases
Solution Approach 1:
The patent changes the charge mobility parameter of the active layer material to such a high level that the channel width-to-length ratio can be optimized for both current driving capability and aperture ratio. With titanium oxide's high charge mobility, efficient current transport is achieved even with optimized dimensional ratios, allowing high aperture ratios to be maintained while still providing sufficient current driving capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of low-cost, high-performance thin film transistors with enhanced charge mobility and stability, suitable for various electronic applications, including flexible displays and RFID tags, while being environmentally friendly.
Implementation Method 1
forming an active layer on the substrate using polycrystalline or amorphous titanium oxides
Implementation Method 2
formed through methods like spin coating and chemical vapor deposition
Implementation Method 3
forming a slurry by mixing polycrystalline or amorphous titanium oxides with a solvent
Data Source
AI summary
Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.