Selective Titanium Oxide Film Etching Over Titanium Nitride
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Solution Overview
Problem
Existing methods for etching titanium oxide films on substrates are inefficient and require temperature changes during the process, prolonging the time required for etching.
Innovation Solution
A method involving the use of hydrogen fluoride gas to react with titanium oxide films at controlled temperatures, followed by chemical oxide removal and post-heat treatment processes, allowing for selective etching of titanium oxide films without temperature changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching methods are used to remove titanium oxide films, then the etching process can be completed, but the etching time is prolonged and requires temperature changes during the process
Solution Approach 1:
The patent changes the chemical parameters of the etching process by using hydrogen fluoride-based etching solution instead of conventional etchants. This parameter change enables rapid etching of titanium oxide films at constant temperature without requiring temperature cycling, thereby resolving the contradiction between etching completeness and etching time
Solution Approach 2:
The patent replaces the thermal field approach (temperature changes) with a chemical field approach (hydrogen fluoride-based etching). This substitution eliminates the need for temperature changes during etching while maintaining high etching efficiency, thus resolving the contradiction between process effectiveness and time consumption
2Reliability
If conventional etching methods are used, then etching can be performed, but the process requires temperature changes which prolongs the overall processing time
Solution Approach 1:
The patent changes the chemical composition parameter of the etching medium to hydrogen fluoride-based solution, which provides both high etching effectiveness for titanium oxide and operates effectively at constant temperature, thereby reducing total processing duration while maintaining reliability
Solution Approach 2:
The patent applies a titanium nitride film as a protective layer before etching. This preliminary action protects the underlying substrate from damage during etching while allowing rapid etching of the titanium oxide layer with hydrogen fluoride, thus maintaining reliability while reducing processing time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables efficient and rapid removal of titanium oxide films while maintaining the integrity of underlying titanium nitride films, reducing etching time and introducing fluorine into the substrate.
Implementation Method 1
supplying an etching gas containing a hydrogen fluoride gas to the substrate to etch the titanium oxide film
Implementation Method 2
introducing fluorine into the substrate
Data Source
AI summary
A method of processing a substrate, the method includes preparing the substrate in which a titanium nitride film and a titanium oxide film are stacked in this order, and supplying an etching gas containing a hydrogen fluoride gas to the substrate to etch the titanium oxide film.