Titanium Oxynitride Film Bandgap Control via Alternating Layer Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for forming titanium oxynitride films, such as sputtering and ion plating, face challenges in controlling the nitrogen content and bandgap due to the thermal stability of titanium-oxygen bonds, making it difficult to achieve precise nitrogen incorporation and bandgap control.
Innovation Solution
A method involving the alternated lamination of titanium oxide and titanium nitride layers using a filtered arc ion plating method for the oxide layers and sputtering for the nitride layers, with controlled gas flow and pressure conditions to achieve a compound film with specific nitrogen and oxygen ratios, allowing for precise bandgap tuning between 1.0 eV and 3.1 eV.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single-layer titanium oxynitride film is formed by sputtering or ion plating, then the film formation process is simple, but nitrogen is hardly taken into the film and it is difficult to control the amount of nitrogen and bandgap
Solution Approach 1:
The patent divides the single-layer oxynitride film into multiple alternating layers of oxide and nitride compounds. By segmenting the film structure, nitrogen can be effectively incorporated in the nitride layers while maintaining overall film integrity. This segmentation allows precise control of nitrogen content through adjustment of layer thickness ratios, resolving the contradiction between simple process and precise nitrogen control.
Solution Approach 2:
The patent creates a composite structure by laminating different compound layers (oxide and nitride) alternately. This composite approach enables the film to possess properties of both oxide (oxygen incorporation) and nitride (nitrogen incorporation) layers, achieving controllable nitrogen content and可调 bandgap while maintaining a relatively simple alternating deposition process.
2Manufacturing precision
If titanium oxide layers and titanium nitride layers are laminated alternately by atomic layer deposition, then the film structure is well-controlled, but nitrogen in the nitride layer is substituted by oxygen and nitrogen incorporation remains difficult
Solution Approach 1:
The patent changes the deposition method parameters by using filtered arc ion plating for oxide layers and sputtering for nitride layers, rather than atomic layer deposition for both. This parameter change prevents oxygen from substituting nitrogen in the nitride layers, as the sputtering method allows better nitrogen retention. The distinct method assignment to each layer type preserves nitrogen content while maintaining structure control.
3Manufacturing precision
If the bandgap is to be controlled precisely, then the nitrogen content must be precisely controlled, but conventional methods cannot achieve optional nitrogen incorporation due to thermal stability of titanium-oxygen bonds
Solution Approach 1:
The patent introduces dynamic control capability by allowing adjustment of the thickness ratio between oxide and nitride layers. By dynamically changing the layer thickness parameters during fabrication, the overall nitrogen content and bandgap can be precisely controlled and tuned. This dynamic adjustment mechanism provides versatility in nitrogen incorporation while achieving precise bandgap control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of titanium oxynitride films with controlled nitrogen content and bandgap, overcoming the limitations of previous methods by ensuring accurate nitrogen incorporation and uniform film properties.
Implementation Method 1
the first compound layer includes one or more elements selected from metal elements and semimetal elements and oxygen element and is formed by a filtered arc ion plating method
Implementation Method 2
the second compound layer includes one or more of the elements and nitrogen element and is formed by a sputtering method
Data Source
AI summary
An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.