Titanium Resist Underlayer Film for Semiconductor Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional multilayer resist methods face challenges in achieving reasonable production processes for semiconductor devices, particularly in finer patterning where conventional organic and silicon-containing films struggle with etching selectivity and mild separation conditions, leading to damage and inefficiencies in microfabrication processes.
Innovation Solution
A patterning process involving the use of a titanium-containing resist underlayer film with 10% to 60% titanium by mass, applied in conjunction with an organic underlayer film, allows for wet stripping under milder conditions, enabling efficient pattern transfer and removal without damaging the substrate, using a chemically amplified resist composition and hydrogen peroxide stripper.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional organic and silicon-containing films are used in multilayer resist methods, then the etching selectivity is insufficient and separation conditions are harsh, but this leads to substrate damage and process inefficiency
Solution Approach 1:
A titanium-containing underlayer film is introduced as an intermediary between the photoresist and the substrate. This underlayer film serves as a mediator that provides both etching selectivity and a mild stripping interface, resolving the contradiction between maintaining substrate integrity and achieving effective pattern transfer.
Solution Approach 2:
The patent employs a composite multilayer structure consisting of photoresist, titanium-containing underlayer film, and substrate. The titanium-containing film combines properties of both organic and inorganic materials, providing etching resistance while allowing mild chemical stripping, thus improving reliability without excessive manufacturing complexity.
2Loss of substance
If conventional stripping methods are used to remove resist underlayer films, then complete removal is achieved, but this causes damage to the underlying substrate and processed structures
Solution Approach 1:
The titanium-containing underlayer film acts as a sacrificial intermediary that can be selectively removed by mild stripping solutions (such as dilute HF or organic solvents) without affecting the underlying substrate. This mediator absorbs the harmful effects of the stripping process, protecting the substrate while enabling complete removal of the resist pattern.
Solution Approach 2:
The patent changes the chemical composition parameters of the underlayer film by incorporating titanium compounds (such as titanium alkoxides or titanium salts) that exhibit different chemical reactivity compared to conventional silicon-containing films. This parameter change enables the use of milder stripping conditions that do not damage the substrate.
3Manufacturing precision
If finer patterning is pursued to achieve smaller feature sizes, then resolution is improved, but etching selectivity and separation conditions become more difficult to achieve
Solution Approach 1:
The titanium-containing underlayer film serves as a reliable intermediary that maintains etching selectivity even at finer pitch dimensions. Its unique chemical properties provide a consistent interface between the photoresist pattern and the substrate, enabling precise pattern transfer without compromising etching selectivity as feature sizes decrease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the successful removal of the titanium-containing resist underlayer film and hard mask without substrate damage, facilitating finer patterns and enabling processes like double patterning, while maintaining the integrity of the semiconductor substrate.
Implementation Method 1
removing an exposed area of the titanium-containing hard mask and the titanium-containing resist underlayer film by wet stripping method
Data Source
AI summary
A patterning process includes (1) forming, on a body to be processed on which a titanium-containing hard mask is formed, an organic underlayer film; (2) forming, on the organic underlayer film, a titanium-containing resist underlayer film having a titanium content of 10% to 60% by mass; (3) forming a photoresist film on the titanium-containing resist underlayer film; (4) forming a photoresist pattern by exposing the photoresist film and developing; (5) pattern-transferring onto the titanium-containing resist underlayer film by using the photoresist pattern as a mask; (6) pattern-transferring onto the organic underlayer film by using the titanium-containing resist underlayer film as a mask; and (7) removing the titanium-containing hard mask and the titanium-containing resist underlayer film by wet stripping method. A patterning process including removing a resist underlayer film using a wet stripper having a milder condition than the conventional stripper without causing damage to a body to be processed.