Fine-Grain Titanium Sputtering Target for High-Speed Deposition
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Solution Overview
Problem
Conventional titanium sputtering targets face issues with cracks, breakage, and particle/nodule generation during high-speed sputtering due to their average crystal grain diameter, which is not sufficiently reduced to prevent these issues under future higher load conditions.
Innovation Solution
A titanium sputtering target with a recrystallized structure having an average crystal grain diameter of 1 μm or less is produced through large strain processing, cold rolling, and heat treatment at 320° C. or less, enhancing its strength and reducing particle/nodule formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the average crystal grain diameter of the recrystallized structure is reduced to suppress particle and nodule generation, then the manufacturing complexity increases due to additional processing steps
Solution Approach 1:
The patent applies preliminary action by performing large strain processing and cold rolling before the final sputtering process to pre-establish the fine crystal grain structure. This preliminary preparation ensures that the target material has the required microstructure (average crystal grain diameter of 1 μm or less) before actual use, preventing particle and nodule generation during sputtering without adding complexity to the operational process
Solution Approach 2:
The patent changes physical parameters by controlling the average crystal grain diameter to 1 μm or less through specific processing conditions (large strain processing, cold rolling, and heat treatment at 320°C or less). This parameter control transforms the material's microstructure to eliminate harmful effects during sputtering
2Productivity
If the titanium target is subjected to higher load conditions for high-speed sputtering, then productivity increases, but cracks and breakage occur due to insufficient strength
Solution Approach 1:
The patent changes the microstructural parameter of average crystal grain diameter to 1 μm or less, which fundamentally alters the mechanical properties of the titanium target. This parameter change increases the target's strength and toughness, enabling it to withstand the higher loads and stresses of high-speed sputtering without cracking or breaking, thus maintaining reliability at high productivity levels
Solution Approach 2:
The patent performs preliminary strengthening through large strain processing and cold rolling to pre-harden the target material before high-speed sputtering. This preliminary action ensures the target has sufficient strength to handle high-power conditions, preventing failures during high-productivity operations
3Strength
If the average crystal grain diameter is reduced to 1 μm or less to improve target strength, then the manufacturing precision requirements increase
Solution Approach 1:
The patent systematically changes multiple processing parameters (strain amount, rolling ratio, heat treatment temperature) to achieve the target crystal grain diameter of 1 μm or less. By controlling these parameters within specific ranges, the patent achieves both high strength and acceptable manufacturing precision without requiring extreme precision in any single step
Solution Approach 2:
The patent segments the manufacturing process into distinct stages (large strain processing, cold rolling, heat treatment), where each stage contributes to the final crystal grain structure. This segmentation allows control of the overall grain size through cumulative effects rather than requiring extreme precision in a single step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses cracks, breakage, and particle/nodule generation during sputtering, making the titanium target suitable for high-speed sputtering applications by increasing its strength and purity, while maintaining a controlled crystal grain diameter.
Implementation Method 1
In sputtering, a high voltage is applied between a substrate and a titanium target while introducing an inert gas (e.g., an Ar gas) in vacuum, and ions such as ionized Ar+ are allowed to collide with the titanium target, and titanium atoms are released by its collision energy to deposit them onto the substrate
Implementation Method 2
large strain processing, cold rolling, and heat treatment at 320° C. or less, enhancing its strength and reducing particle/nodule formation
Implementation Method 3
heat treatment at 320° C. or less
Implementation Method 4
a recrystallized structure having an average crystal grain diameter of 1 μm or less
Data Source
AI summary
Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 μm or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.