High-Purity Titanium Target with S and Si Additives
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Solution Overview
Problem
Current titanium targets for sputtering suffer from impurity-related issues, such as the diffusion of substances leading to film degradation, fractures, and cracks during high power sputtering, which result in unstable sputtering properties and particle generation.
Innovation Solution
A high-purity titanium target with 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, achieving a purity of 99.995% or higher, is developed to inhibit impurity diffusion, maintain crystal grain size below 70 μm, and stabilize sputtering properties, preventing fractures and cracks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high power sputtering is used to improve production efficiency, then productivity increases, but the target is prone to fractures and cracks
Solution Approach 1:
The patent changes the chemical composition parameters by strictly controlling impurity elements (Fe, Ni, Cu, Mn, Cr, Mo, W, Pt, Pd, Ag, Au, Al, Si, B, C, N, O, H) to specific ranges and adding S (0.01-0.1 mass%) and Si (0.01-0.1 mass%). These parameter changes improve the target's resistance to fractures and cracks during high power sputtering, enabling higher production efficiency without compromising target integrity.
2Manufacturing precision
If impurity concentration is reduced to suppress particle generation, then film quality improves, but target stability during sputtering deteriorates
Solution Approach 1:
The patent optimizes the chemical composition parameters by controlling impurity elements to specific ranges and adding S (0.01-0.1 mass%) and Si (0.01-0.1 mass%). This balanced parameter adjustment reduces particle generation in the deposited film while simultaneously maintaining target stability during sputtering, resolving the contradiction between film quality and target reliability.
Solution Approach 2:
The patent creates a composite material system by combining high-purity titanium with specific amounts of S and Si additives. This composite composition achieves both low particle generation (for high film quality) and high target stability during sputtering, as the S and Si elements enhance the material's overall performance without introducing harmful impurities.
3Object-generated harmful factors
If titanium film is used as a pasting layer to prevent particle generation, then particle suppression improves, but adhesive strength is insufficient and peeling occurs
Solution Approach 1:
The patent changes the compositional parameters by adding S (0.01-0.1 mass%) and Si (0.01-0.1 mass%) to the titanium target. These parameter changes improve the adhesive strength of the titanium film while maintaining its particle suppression function, preventing peeling from the inner wall of the film-forming device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target effectively reduces particle generation, maintains stable sputtering, and ensures high-quality film deposition by inhibiting impurity diffusion and crystal grain coarsening, even under high temperature conditions.
Implementation Method 1
This sputtering method is a method of physically colliding positive ions such as Ar+ to a target disposed on a cathode and releasing the metal atoms structuring the target with the collision energy thereof.
Data Source
AI summary
The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.