TJBS Diode Trench Layout for Shorter Vertical Current Paths
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Solution Overview
Problem
Conventional semiconductor structures with trench junction Schottky (TJBS) diodes have a long current path due to the position of the junction Schottky barrier, resulting in higher resistance.
Innovation Solution
A semiconductor structure with a TJBS diode integrated in parallel to a UMOS structure, where the insulating layer on the sidewall of the TJBS diode does not have a side gate, allowing for a vertical current path from the source through a gap, thereby positioning the Schottky barrier at the lowest point between the metal layer and the N-drift region for a shorter, perpendicular current path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the junction Schottky barrier is positioned in the conventional location, then the device structure is simpler, but the current path becomes too long resulting in higher resistance
Solution Approach 1:
The Schottky barrier junction is repositioned from a conventional planar configuration to a vertical configuration at the bottom of the trench. This dimensional change allows the current path to flow vertically through the gap at the trench bottom, significantly shortening the current path length and reducing resistance while maintaining structural simplicity through the use of standard trench formation processes
2Reliability
If the Schottky barrier is positioned to shorten the current path, then resistance decreases, but the device area may increase
Solution Approach 1:
The insulating layer is selectively positioned only at the sidewalls of the trench, leaving the bottom of the trench free of insulating material. This local quality differentiation allows the Schottky barrier to form directly at the trench bottom with a vertical current path, shortening the current path length without requiring additional lateral space, thus reducing resistance while maintaining compact device area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the current path length and resistance, enabling a more efficient semiconductor structure with lower resistance and smaller area.
Implementation Method 1
the Schottky barrier is located at the junction between the lowest point of the metal layer (5) of the source (S) and the N-drift region (10c)
Data Source
AI summary
A semiconductor structure includes: a U-metal-oxide-semiconductor field-effect transistor (UMOS) structure; and a trench junction barrier Schottky (TJBS) diode, wherein an insulating layer of a sidewall of the TJBS diode does not have a side gate.