Templated Liquid-Phase Growth of Single-Crystal III-V Semiconductors
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Solution Overview
Problem
The challenge lies in growing single-crystal semiconductors on amorphous substrates, as existing methods struggle with controlling nucleation and growth rates, often resulting in nanocrystalline structures due to slow kinetics and difficulty in achieving user-defined geometries and dimensions.
Innovation Solution
The templated liquid-phase (TLP) crystal growth process involves defining a semiconductor structure shape on an amorphous substrate, depositing a nucleation layer and a boron group element, followed by heating in the presence of a nitrogen group element gas to grow a single crystal semiconductor structure, allowing for user-defined geometries and scalability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If epitaxial growth techniques are performed on amorphous substrates, then single-crystalline thin films can be obtained, but the substrate must be closely lattice-matched which limits substrate selection and increases complexity
Solution Approach 1:
The patent introduces an intermediary liquid-phase template layer between the amorphous substrate and the growing crystal. This liquid phase acts as a mediator that enables single-crystal growth without requiring lattice matching between substrate and film, thereby allowing use of arbitrary substrates while maintaining high crystal quality
Solution Approach 2:
The patent changes the physical state parameter of the intermediate layer from solid to liquid during the growth process. By maintaining the template in a liquid phase at elevated temperatures, the system enables epitaxial-like growth on amorphous substrates without lattice-matching constraints
2Reliability
If conventional epitaxial growth is used, then high-quality single-crystalline films are achieved, but the growth kinetics are slow and user-defined geometries are difficult to achieve
Solution Approach 1:
The patent utilizes phase transition by maintaining the template layer in a liquid state during growth. This liquid-phase template enables faster growth kinetics compared to conventional solid-phase epitaxial growth, while still producing high-quality single crystals with user-defined geometries
Solution Approach 2:
The patent performs preliminary patterning of the liquid-phase template into desired geometries before growth begins. This pre-definition of shapes allows direct formation of user-defined crystal geometries without requiring post-growth processing, thereby increasing productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the growth of high-performance, single-crystal III-V semiconductors with user-defined geometries on arbitrary substrates, offering advantages in compatibility, scalability, and processing cost, and providing a pathway for three-dimensional integration of electronic materials and devices.
Implementation Method 1
heating in the presence of a nitrogen group element gas to grow a single crystal semiconductor structure
Implementation Method 2
A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element
Data Source
AI summary
This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.