2D TMD Electric Field Sensor With High-Sensitivity Channel Layer
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Solution Overview
Problem
Semiconductor sensor devices for measuring electric field strength face challenges in achieving high measurement sensitivity due to low Fermi level state density, despite having high carrier mobility, which is typically exhibited by graphene.
Innovation Solution
A sensor device is designed with a channel layer made of two-dimensional transition metal dichalcogenides, such as MoS2, which has a high Fermi level state density, and includes a dielectric layer and electrodes to measure electric field strength by detecting current changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If graphene is used as the channel layer material, then carrier mobility is improved, but Fermi level state density deteriorates
Solution Approach 1:
The patent changes the material parameter of the channel layer from graphene to two-dimensional transition metal dichalcogenide, which fundamentally alters the electronic structure properties. This material substitution enables simultaneous achievement of high carrier mobility and high Fermi level state density, resolving the contradiction between these two parameters.
2Measurement precision
If mechanical sensor devices are used, then measurement sensitivity is improved, but device size and weight increase
Solution Approach 1:
The patent replaces mechanical sensor devices with a semiconductor sensor device that uses a two-dimensional transition metal dichalcogenide channel layer. The measurement sensitivity is achieved through electrical field effects on carrier transport in the semiconductor channel, eliminating the need for mechanical components while maintaining or improving sensitivity and reducing weight.
3Measurement precision
If Fermi level state density is increased, then measurement sensitivity is improved, but device complexity increases
Solution Approach 1:
The patent achieves high Fermi level state density through material selection (two-dimensional transition metal dichalcogenide) rather than through complex device structures or additional components. The intrinsic material properties provide the desired high state density, keeping the device structure simple and straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor device achieves high measurement sensitivity for electric fields by leveraging the high Fermi level state density of the channel layer, allowing for precise detection of even small electric fields with reduced size and weight compared to mechanical sensors.
Implementation Method 1
The electric field strength of an external electric field applied to the semiconductor sensor device is measured as the size of the current flowing between the source electrode and drain electrode
Data Source
Figure 1(A)~1(B)
Figure 2
Figure 3(A)~3(C)
AI summary
Provided is a sensor device with high measurement sensitivity for an external electric field. The sensor device is able to measure electric field strength of an external electric field. The sensor device has a first dielectric layer, a channel layer disposed directly on the first dielectric layer and having a channel region, and also having an atomic layer material film of one or more atomic layers formed by a two-dimensional transition metal dichalcogenide, and a first electrode and second electrode disposed on either side of the channel region, in electrical contact with the channel layer, wherein the channel layer has a first side and a second side, the first side being disposed on the first dielectric layer, and the second side being exposed to the outside or a second dielectric layer being disposed on the second side, and the Fermi level of the channel layer being positioned in the conduction band or valence band of the channel layer, and located above the trap level band at the interface of the first dielectric layer with the channel layer.