Transition Metal Dichalcogenide FinFETs for High Density
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Solution Overview
Problem
Current field-effect transistors with transition metal dichalcogenide channels face limitations in achieving high density and maximizing drive current per unit wafer area or device footprint.
Innovation Solution
The formation of transition metal dichalcogenide (TMD) layers using chemical vapor deposition (CVD) processes, where precursor materials react to form TMD layers with specific thickness and orientation, followed by patterning into fins and formation of gate dielectrics and electrodes, enhances the density and performance of field-effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional transistor fabrication methods are used, then manufacturing simplicity is maintained, but device density and drive current per unit area are limited
Solution Approach 1:
The channel region is divided into multiple fins extending from the substrate surface, creating a three-dimensional structure that increases the effective channel width and device density within the same footprint. Each fin acts as an independent conduction path, allowing parallel current flow through multiple channels.
Solution Approach 2:
The transistor structure transitions from a planar two-dimensional configuration to a three-dimensional vertical structure with fins extending upward from the substrate. This dimensional change allows the gate electrode to control multiple channel regions simultaneously, increasing drive current without proportionally increasing footprint area.
2Power
If planar transistor structures are used, then fabrication is simpler, but effective device width and drive current are reduced
Solution Approach 1:
The channel is segmented into multiple discrete fins rather than a single planar region. This segmentation increases the total effective width of the channel by utilizing vertical space, allowing more current pathways while maintaining compact lateral dimensions.
Solution Approach 2:
Multiple fin structures are nested within the footprint of a single planar transistor would occupy. The fins are arranged vertically and can be positioned to maximize space utilization, with the gate electrode wrapping around or covering multiple fins to control all channels simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-density field-effect transistors with increased drive current per unit wafer area, optimizing device performance by maximizing the effective device width and density.
Implementation Method 1
The formation of transition metal dichalcogenide (TMD) layers using chemical vapor deposition (CVD) processes, where precursor materials react to form TMD layers with specific thickness and orientation
Data Source
AI summary
A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.