TMD FinFET Channel Contacts With Gradient Metal Interfaces
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Solution Overview
Problem
Current field-effect transistors (FETs) face challenges in achieving low contact resistance and high device density due to the limitations in the formation of transition metal dichalcogenide (TMD) channel layers and metal source/drain terminals, which affect the efficiency and performance of ultrasmall devices.
Innovation Solution
A method of fabricating FET devices involves forming patterned stack layers with transition metal oxide and metal layers as nucleation seeds, followed by a growth process to create a channel layer and metallic stacks with covalent bonding, resulting in gradation regions that reduce contact resistance and enhance device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional formation methods are used for TMD channel layers and metal source/drain terminals, then manufacturing simplicity is maintained, but contact resistance remains high and device density is limited
Solution Approach 1:
The formation process is divided into distinct stages: first forming the TMD channel layer with specific crystal orientation, then separately forming metal source/drain terminals with gradient composition regions. This segmentation allows each component to be optimized independently for low contact resistance while maintaining overall process manageability
Solution Approach 2:
Gradient composition regions are created at the interface between metal source/drain terminals and TMD channel layer, where the material composition varies continuously to reduce contact resistance. The local atomic structure is engineered to facilitate charge carrier transport while maintaining crystalline coherence, achieving low contact resistance without requiring complex global process changes
2Productivity
If ultrasmall device dimensions are pursued, then device density increases, but contact resistance and performance efficiency deteriorate
Solution Approach 1:
The crystal orientation parameter of the TMD channel layer is controlled to achieve specific orientations (such as armchair direction) that favor charge carrier transport. Additionally, the composition gradient in the metal-TMD interface region is engineered to optimize charge injection efficiency, allowing ultrasmall devices to maintain high performance despite reduced dimensions
Solution Approach 2:
Composite structures are formed at the metal-TMD interface with gradient composition regions that combine metallic and TMD materials in varying proportions. This composite approach creates an intermediate region that facilitates charge carrier injection from metal into the TMD channel, maintaining high charge injection efficiency in ultrasmall devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach leads to lower contact resistance between the channel layer and source/drain terminals, improving charge injection efficiency and device performance while allowing for high-density integrated circuitry.
Implementation Method 1
forming patterned stack layers with transition metal oxide and metal layers as nucleation seeds
Implementation Method 2
followed by a growth process to create a channel layer and metallic stacks with covalent bonding
Data Source
AI summary
A transistor device having fin structures, source and drain terminals, channel layers and a gate structure is provided. The fin structures are disposed on a material layer. The fin structures are arranged in parallel and extending in a first direction. The source and drain terminals are disposed on the fin structures and the material layer and cover opposite ends of the fin structures. The channel layers are disposed respectively on the fin structures, and each channel layer extends between the source and drain terminals on the same fin structure. The gate structure is disposed on the channel layers and across the fin structures. The gate structure extends in a second direction perpendicular to the first direction. The materials of the channel layers include a transition metal and a chalcogenide, the source and drain terminals include a metallic material, and the channel layers are covalently bonded with the source and drain terminals.