Selective Oxidation Patterning of 2D TMDs Nanomaterials

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Solution Overview

Problem

Current methods for patterning two-dimensional transition metal dichalcogenides (TMDs) nanomaterials, such as MoS2, are complex and expensive due to the requirement of photolithography and subsequent mask removal, which complicates the process and increases costs.

Innovation Solution

A method involving the use of different substrates like silicon dioxide, sapphire, quartz, and mica, combined with controlled annealing temperatures and pressures, to selectively etch and pattern 1-layer TMDs nanomaterials, thereby simplifying the patterning process and improving thermal stability without the need for photolithography or mask removal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography is used for patterning TMDs, then patterning capability is achieved, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvepatterning capabilityVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes the photolithography step from the TMDs patterning process. By using direct growth methods on patterned substrates, the complex photolithography, mask alignment, and mask removal steps are completely eliminated, achieving patterning through a simpler substrate-based approach

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies preliminary action by pre-patterning the substrate before TMDs growth. The substrate is prepared with specific patterns (such as etched regions or different material areas) that directly guide the subsequent TMDs growth to form the desired patterns without requiring post-growth patterning steps

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If photolithography and mask removal are used, then patterned TMDs are obtained, but manufacturing cost increases

Engineering Contradiction:
Improvepatterning accuracyVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent removes the expensive photolithography equipment and mask materials from the process. By using substrate-based patterning with direct growth, the need for costly photolithography tools, photoresist materials, and mask fabrication is eliminated

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses inexpensive substrate patterns (such as simple etched features or deposited layers) that serve as temporary guides during growth and can be easily removed or remain as part of the final device, replacing expensive reusable masks and photoresist materials

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Manufacturing precision

If conventional patterning methods are used, then TMDs can be patterned, but thermal stability decreases

Engineering Contradiction:
Improvepatterning capabilityVSAvoidthermal stability
Core Design Contradiction:
Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent applies preliminary substrate preparation and growth control to create patterns directly during the growth process. This avoids post-growth processing steps that expose TMDs to harsh chemicals and mechanical stress, thereby preserving thermal stability

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces mechanical and chemical patterning methods (photolithography, etching) with a growth-based approach where patterns form during the TMDs synthesis process itself. This substitution eliminates the need for subsequent processing that would compromise thermal stability

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the thermal stability and patterning efficiency of TMDs nanomaterials, allowing for the creation of patterned 2D TMDs without the complexity and expense of traditional methods, while maintaining the semiconductor properties of TMDs.

Implementation Method 1

annealing the preform in a tube furnace filled with air at atmospheric pressure, the annealing temperature ranges from 250° C. to about 290° C., so that the first portion of the 1-layer MoS2 12 is removed by oxidation

Methodology Applied
Scientific EffectOxidation etching: Oxidation

Data Source

PatentUS10643842B2Method for making patterned 2D transition metal dichalcogenides nanomaterials
Publication Date: 2020.05.05 HON HAI PRECISION INDUSTRY CO LTD
  • US10643842B2 patent drawing
  • US10643842B2 patent drawing
  • US10643842B2 patent drawing

AI summary

A method for making patterned two dimensional (2D) transition metal dichalcogenides (TMDs) nanomaterials is disclosed. The method includes making a substrate, wherein the substrate has a substrate surface including a first portion surface and a second portion surface, the first portion surface is formed by oxide or nitride, and the second portion surface is formed by mica; applying a mono 2D TMDs nanomaterials; annealing the mono 2D TMDs nanomaterials and the substrate in an oxygen containing gas, the annealing temperature is controlled so that only the part of the 2D TMDs nanomaterials, that is on the second portion surface, is removed by oxidization, and the other part of the 2D TMDs nanomaterials, that is on the first portion surface, is remained to form the patterned 2D TMDs nanomaterials.