TMR Slider MRR Stability via Oxide Barrier

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Solution Overview

Problem

Conventional TMR element manufacturing processes result in magneto-resistive resistance (MRR) drop due to metal material diffusion between metal layers and the silicon layer, leading to degraded dynamic and read/write performance of sliders in disk drives.

Innovation Solution

A method involving the formation of an oxide layer on the TMR element surface using oxygen and argon plasma etching, followed by reduction of the oxide layer thickness to prevent metal diffusion, thereby maintaining constant MRR values and improving slider performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If metal layers are directly contacted with silicon layer in TMR element, then manufacturing is simplified, but metal material diffuses into silicon layer causing MRR drop

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidMRR stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An oxide layer is introduced as an intermediary between the metal layers and silicon layer. This oxide layer prevents direct contact and diffusion while maintaining manufacturing feasibility. The oxide layer acts as a barrier that blocks metal atoms from diffusing into the silicon layer, thereby preserving MRR stability without requiring complex isolation structures.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful diffusion path is extracted and eliminated by removing the direct interface between metal layers and silicon layer. The oxide layer is formed on the metal layer surface, effectively separating the metal material from the silicon layer and preventing the diffusion mechanism that causes MRR drop.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If oxide layer is formed on TMR element surface, then metal diffusion is prevented, but oxide layer thickness increases reducing signal transmission

Engineering Contradiction:
ImproveMRR stabilityVSAvoidsignal transmission quality
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The thickness of the oxide layer is precisely controlled as a critical parameter. By optimizing the oxide layer thickness to a specific range (e.g., 1-5 nm), the solution achieves both diffusion prevention and signal transmission maintenance. This parameter optimization balances the protective function against the signal transmission requirement.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The oxide layer is formed with different thickness characteristics in different regions. The oxide layer provides sufficient protection at the metal-silicon interface while maintaining thinness in areas where signal transmission occurs, achieving local optimization of both protection and transmission properties.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively prevents MRR drop, enhancing the dynamic and read/write performance of sliders by electrically isolating metal layers from the silicon layer, maintaining optimal performance without compromising signal transmission.

Implementation Method 1

introducing a processing gas containing oxygen gas into the processing chamber, and ionizing the processing gas, thus forming a first etching means

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

exposing the sliders to the first etching means such that an oxide layer is formed on a surface of the TMR element

Methodology Applied
Scientific EffectOxidation: Oxidation

Implementation Method 3

introducing argon gas into the processing chamber, and then ionizing the argon gas, thus forming a second etching means

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 4

exposing the sliders to the second etching means such that the oxide layer is etched to get a reduced thickness

Methodology Applied
Scientific EffectEtching: Erosion

Implementation Method 5

The oxide layer electrically separates the metal layers of the TMR element and the silicon layer of the overcoat, thus preventing diffusion of the metal material

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Data Source

PatentUS8018684B2Method for preventing TMR MRR drop of a slider and method for manufacturing sliders
Publication Date: 2011.09.13 SAE MAGNETICS (HK) LTD
  • US8018684B2 patent drawing
  • US8018684B2 patent drawing
  • US8018684B2 patent drawing

AI summary

The invention provides a method for preventing TMR MRR drop of a slider, including: positioning a row bar constructed by sliders on a tray, each slider incorporating a TMR element; loading the tray into a processing chamber and evacuating the processing chamber to a predetermined pressure; forming a first etching means; exposing the sliders to the first etching means such that an oxide layer is formed on a surface of the TMR element; forming a second etching means; and exposing the sliders to the second etching means such that the oxide layer is etched to get a reduced thickness. The invention also discloses a method for manufacturing sliders.