Pixel Array With GeSi ToF and CMOS Sensors for 3D Color Imaging
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Solution Overview
Problem
Existing imaging systems struggle to combine distance information from Time-of-Flight (ToF) sensors with color information from CMOS image sensors to generate a 3D ToF color image, as outputs from ToF sensors do not provide color information and CMOS image sensors do not provide distance information.
Innovation Solution
A pixel array is designed with a combination of ToF sensors and CMOS image sensors, where ToF sensors use GeSi technology for high quantum efficiency and demodulation contrast, and CMOS image sensors determine color information, with the outputs integrated to generate a 3D ToF color image.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If ToF sensors are used to detect distance information, then distance measurement capability is improved, but color information is lost
Solution Approach 1:
The patent merges ToF sensors and CMOS image sensors into a single integrated sensor array where each pixel location contains both a ToF sensor element and a CMOS sensor element. This allows simultaneous acquisition of distance information from the ToF sensor and color information from the CMOS sensor at the same spatial location, eliminating the trade-off between distance measurement and color capture
Solution Approach 2:
The integrated sensor array provides multi-functionality by enabling both depth mapping (via ToF sensors) and color imaging (via CMOS sensors) within the same device. The system can operate in multiple modes including full 3D color imaging, depth-only mode, and color-only mode, making it universally applicable to various imaging requirements
2Measurement precision
If CMOS image sensors are used to determine color information, then color detection capability is improved, but distance information is lost
Solution Approach 1:
The patent combines CMOS image sensors and ToF sensors in an integrated array where each pixel position contains both sensor types. This merging allows the system to simultaneously capture color information from the CMOS sensor and distance information from the ToF sensor at the same location, eliminating the need to choose between color and depth capabilities
3Adaptability or versatility
If separate ToF sensors and CMOS image sensors are used, then device complexity increases, but integration challenges arise
Solution Approach 1:
The patent merges ToF sensors and CMOS image sensors into a single integrated sensor array fabricated on a common substrate. This integration approach reduces device complexity by sharing common structures such as microlens arrays, color filter arrays, and readout circuitry, while maintaining the versatility of having both sensor types functional within the same device
Solution Approach 2:
The patent employs a nested structure where ToF sensors and CMOS sensors are integrated at the pixel level within the same array footprint. The sensors are nested such that each pixel location contains both a ToF sensor element and a CMOS sensor element, allowing compact integration while maintaining full functionality of both sensor types
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pixel array effectively combines distance and color information to produce a 3D ToF color image, enhancing applications in 3D module construction, virtual reality, augmented reality, 3D printing, and autonomous vehicles.
Implementation Method 1
Time-of-Flight (ToF) sensors (e.g., sensors that use germanium-on-silicon (GeSi) technology to enable ToF sensing) can be used in a system designed to detect distances to objects in an area. Generally, a given ToF sensor detects a phase difference between a signal transmitted by the system and a corresponding signal received by the given ToF sensor (after reflection of the signal by an object in the area).
Implementation Method 2
Complementary metal oxide semiconductor (CMOS) image sensors utilize light-sensitive CMOS circuitry, referred to as pixel sensors, to convert light energy into electrical energy. A pixel sensor typically includes a photodiode formed in a silicon substrate. As the photodiode is exposed to light, an electrical charge is induced in the photodiode.
Data Source
AI summary
A pixel array may include a group of time-of-flight (ToF) sensors. The pixel array may include an image sensor comprising a group of pixel sensors. The image sensor may be arranged among the group of ToF sensors such that the image sensor is adjacent to each ToF sensor in the group of ToF sensors.


