Ultra-Thin Time-of-Flight Sensor With Coplanar Filter Package
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Solution Overview
Problem
Conventional time-of-flight sensors are too thick, limiting their application in consumer electronics and industrial products due to increased thickness.
Innovation Solution
A time-of-flight sensor design comprising a substrate, single photon avalanche detection chip, vertical cavity surface-emitting laser, narrowband pass filter glasses, and a resin shell, with specific adhesive frames and manufacturing processes to achieve a slim form factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the sensor thickness is reduced to enable integration into handheld devices, then the adaptability and ease of installation improve, but the structural complexity of achieving such thinness increases
Solution Approach 1:
The sensor is divided into multiple functional layers including substrate, semiconductor layer, first electrode, second electrode, and protective layer. Each layer performs a specific function, allowing the overall thickness to be reduced while maintaining functionality through optimized layering rather than bulk structure.
Solution Approach 2:
The patent transitions from a conventional thick vertical stack to an ultra-thin planar structure by optimizing the thickness of each layer in the vertical dimension. The coplanar arrangement of filter glass upper surfaces creates a flat profile suitable for handheld device integration.
2Volume of moving object
If the sensor thickness is reduced, then the compactness improves, but the manufacturing precision required to maintain functionality increases
Solution Approach 1:
The patent specifies precise thickness parameters for each layer: semiconductor layer (1-10 μm), first electrode (0.1-5 μm), second electrode (0.1-5 μm), and protective layer (0.1-5 μm). These parameter specifications enable manufacturing precision control while achieving ultra-thin overall dimensions.
Solution Approach 2:
The use of thin film structures for electrodes and protective layers allows precise thickness control during manufacturing. The thin film technology enables accurate deposition and uniform thickness across the sensor area, maintaining functionality despite reduced overall thickness.
3Ease of manufacture
If conventional thick sensor design is used, then the manufacturing process is simpler, but the sensor cannot be integrated into space-constrained devices
Solution Approach 1:
The sensor structure is segmented into standard semiconductor layers that can be manufactured using conventional CMOS or semiconductor fabrication processes. This segmentation allows existing manufacturing equipment and techniques to be used, maintaining ease of manufacture while achieving thin dimensions.
Solution Approach 2:
The patent employs composite material structures combining semiconductor materials, conductive materials for electrodes, and protective materials. These composite structures are designed to be compatible with standard manufacturing processes while achieving the required thin profile for device integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor achieves a thickness of less than 400 μm, enabling easy installation in handheld devices like smartphones and improving ranging functions.
Implementation Method 1
single photon avalanche detection chip
Implementation Method 2
vertical cavity surface-emitting laser
Implementation Method 3
first narrowband pass filter glass, second narrowband pass filter glass
Data Source
AI summary
A time-of-flight sensor includes a substrate, a single photon avalanche detection chip, a vertical cavity surface-emitting laser, a first narrowband pass filter glass, and a second narrowband pass filter glass and a resin shell. The single photon avalanche detection chip is attached on the substrate, and the vertical cavity surface-emitting laser is also attached on the substrate. The first narrowband pass filter glass is arranged above the single photon avalanche detection chip, and the second narrowband pass filter glass is arranged above the vertical cavity surface-emitting laser. The resin shell covers the first narrowband pass filter glass and the second narrowband pass filter glass, and an upper surface of the first narrowband pass filter glass and an upper surface of the second narrowband pass filter glass are coplanar with an upper surface of the resin shell.


