Top Gate TFT Sensor Fabrication Reducing Mask Count
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Solution Overview
Problem
Conventional sensor fabrication processes are costly and complex, requiring multiple patterning processes and masks, which complicates production and limits capacity.
Innovation Solution
A sensor with a top gate TFT configuration is fabricated using six or seven patterning processes, reducing the number of masks needed and simplifying the production process, while improving the defect-free rate and production capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes (9-11 masks) are used to form multi-layer sensor, then manufacturing precision and structural completeness are improved, but device complexity and production cost increase significantly
Solution Approach 1:
The patent combines multiple patterning operations into fewer steps by using a single mask to define multiple layers simultaneously. The gate electrode layer and active layer are patterned in the same masking step, reducing the total number of masks from 9-11 to just 6-7 while maintaining the required structural precision.
Solution Approach 2:
The patent makes the mask serve multiple functions by using it to define both the gate electrode pattern and the active layer pattern in a single operation. This multi-functional mask approach eliminates the need for separate dedicated masks for each layer, simplifying the overall fabrication process.
2Manufacturing precision
If multiple patterning processes (9-11 masks) are used to form multi-layer sensor, then structural completeness is improved, but productivity decreases due to increased process time
Solution Approach 1:
The patent merges sequential patterning steps into parallel operations by defining multiple layers in a single masking and etching cycle. This reduces the total process time from 9-11 sequential steps to 6-7 steps, directly improving production capacity while maintaining layer formation accuracy.
Solution Approach 2:
The patent performs preliminary patterning of multiple layers simultaneously before subsequent processing steps. By establishing the patterns for gate electrode and active layer in the same initial masking step, the design is locked in early, allowing parallel processing of different regions and improving overall throughput.
3Manufacturing precision
If multiple patterning processes (9-11 masks) are used to form multi-layer sensor, then manufacturing completeness is improved, but ease of manufacture deteriorates
Solution Approach 1:
The patent combines multiple independent patterning processes into an integrated sequence with fewer discrete steps. By using a unified masking approach that defines multiple layers simultaneously, the complex 9-11 step process is consolidated into 6-7 steps, making the manufacturing process simpler and more manageable.
Solution Approach 2:
The patent creates a universal patterning methodology where a single mask design can define multiple functional layers. This universal approach replaces the need for numerous specialized masks, significantly improving ease of manufacture while maintaining the required fabrication accuracy for each layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reduced number of patterning processes lowers production costs and enhances the efficiency and quality of sensor production, improving the defect-free rate and capacity.
Implementation Method 1
the photocurrent signal generated by the photodiode 13
Data Source
AI summary
A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein: the TFT device is a top gate TFT; the photodiode sensing device includes: a bias electrode and a bias electrode pin connected with the bias electrode, both of which are disposed on the base substrate; a photodiode disposed on the bias electrode and a transparent electrode disposed on the photodiode and connected with the source electrode.