Top-Side Cooled Semiconductor Package With Creepage Isolation
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Solution Overview
Problem
The packaging technology for semiconductor devices often limits their ability to dissipate heat, conduct current, and switch at high speeds, particularly in small form factor devices or those with close contact to housing, leading to operational issues due to excessive heat.
Innovation Solution
The development of top-side cooled semiconductor packages with built-in electrical isolation and creepage extension structures, which include a power substrate and heat sink, enhances thermal conductivity and voltage capabilities by directing heat away from the semiconductor die and increasing the surface distance between electrical components without increasing the package size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional packaging is used, then the package size remains compact, but heat dissipation capability is limited
Solution Approach 1:
The patent transitions from conventional bottom-side or side cooling to top-side cooling of the semiconductor die. The heat sink is positioned above the die and housing, utilizing the vertical dimension to conduct heat away from the die through the first contact and thermal path, thereby improving heat dissipation without increasing the horizontal footprint of the package.
Solution Approach 2:
The housing structure serves multiple functions: it provides mechanical support, electrical isolation through creepage extensions, and acts as a thermal management component by incorporating a thermal path from the die to the heat sink. This multi-functionality allows compact packaging while maintaining effective heat dissipation.
2Reliability
If electrical isolation is increased, then voltage capability improves, but the distance between electrical components increases
Solution Approach 1:
The creepage extension structures are strategically positioned only in critical isolation regions where high voltage stress occurs, such as between the first contact (connected to the die) and the second contact (connected to the circuit board). This localized approach provides necessary electrical isolation and voltage capability without unnecessarily increasing the overall package dimensions.
Solution Approach 2:
The creepage extension structures are integrated within the housing volume, nesting the isolation features inside the existing package boundaries. The extensions protrude into the housing interior space, providing increased creepage distance without increasing the external package footprint.
3Temperature
If thermal conductivity is enhanced, then heat dissipation improves, but the package structure becomes more complex
Solution Approach 1:
The thermal path is integrated into the existing housing structure rather than being a separate component. The housing material itself or attached thermal conductive elements form the thermal path from the die through the first contact to the heat sink, merging structural and thermal management functions into a unified design.
Solution Approach 2:
The first contact serves dual functions: it provides electrical connection to the semiconductor die and acts as part of the thermal conduction path. Similarly, the housing structure provides both mechanical support and thermal management pathways, reducing the need for additional dedicated thermal components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively improves heat dissipation and current handling capabilities, reducing the risk of overheating and enhancing the performance and reliability of semiconductor devices in high-power applications.
Implementation Method 1
The first contact is included in a thermal transfer path for the top-side cooled semiconductor package
Implementation Method 2
a heat sink operably connected to the top side of the housing
Data Source
AI summary
Top-side cooled semiconductor packages are disclosed. A top-side cooled semiconductor package may be a leaded or a leadless semiconductor package. A top-side cooled semiconductor package can include built-in electrical isolation for a semiconductor die within a housing of the semiconductor package. A top-side cooled semiconductor package may include one or more arrangements of creepage extension structures. A creepage extension structure may be arranged as part of a top side of a housing, of part of at least one peripheral side of the housing, as part of a bottom side of the housing, or combinations thereof.