Topography Driven OPC for Lithography Pattern Transfer Integrity
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Solution Overview
Problem
Conventional pattern enhancement techniques are inadequate for improving pattern transfer integrity, particularly in advanced nodes, leading to lithographic weak points that impact the integrity of the pattern transfer process during the fabrication of devices like integrated circuits.
Innovation Solution
A lithographic enhancement process that includes topography analysis, optical proximity correction (OPC), and process window qualification (PWQ) to adjust mask patterns based on defocus values and topography information, generating an adjusted design data file for improved mask sets and wafer processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional pattern enhancement techniques are used, then the manufacturing process is simple, but the pattern transfer integrity is poor
Solution Approach 1:
The patent performs topography analysis and OPC adjustments before mask fabrication, predicting and correcting lithographic weak points in advance. This preliminary action ensures pattern transfer integrity is maintained without requiring complex real-time adjustments during manufacturing.
Solution Approach 2:
The lithographic enhancement process is segmented into distinct modules: topography analysis, defocus value determination, OPC adjustment, and verification. This segmentation allows each function to be performed independently and systematically, managing complexity while achieving high pattern transfer integrity.
2Reliability
If topography analysis and OPC are performed, then lithographic weak points are identified and addressed, but the processing time increases
Solution Approach 1:
Topography analysis and OPC adjustments are performed in advance during the design phase, identifying and correcting lithographic weak points before mask fabrication. This preliminary action prevents defects rather than requiring time-consuming rework during manufacturing, improving reliability without significant time penalty.
Solution Approach 2:
The process uses feedback from topography analysis to automatically adjust OPC parameters and patterns. This closed-loop approach efficiently identifies and corrects lithographic weak points without requiring multiple iterative cycles, reducing processing time while maintaining high pattern transfer integrity.
3Adaptability or versatility
If advanced node fabrication is used, then device functionality is improved, but lithographic weak points increase
Solution Approach 1:
The patent applies local quality by determining specific defocus values for different topography regions and adjusting OPC patterns locally based on regional topography characteristics. This localized approach addresses lithographic weak points specific to each region, maintaining pattern transfer integrity across the entire device structure at advanced nodes.
Solution Approach 2:
The process changes lithographic parameters (defocus values, OPC patterns) based on topography analysis results. By adjusting these parameters according to specific topography conditions, the method maintains pattern transfer integrity while enabling advanced node device functionality.
Data Source
AI summary
Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.