Topological Insulator Memory Device with Ion-Irradiated Coercivity Regions
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Solution Overview
Problem
Existing electronic devices experience energy dissipation due to electrical resistance, and methods like the quantum Hall effect require large external magnetic fields, necessitating the development of devices with minimal or no energy dissipation without such fields.
Innovation Solution
A topological insulator with regions of different coercivity, formed by incorporating magnetism and irradiating with ions, allowing for controlled magnetic field direction and zero energy dissipation in electronic devices, including memory devices, without the need for external magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If electrical conduction is achieved using conventional methods, then electrical conduction is enabled, but energy dissipation occurs due to electrical resistance
Solution Approach 1:
The patent changes the physical state and parameters of the topological insulator material by introducing magnetic doping and creating regions with different coercivities. This allows the material to exhibit quantum Hall effect at room temperature without external magnetic fields, achieving energy-efficient electrical conduction through parameter modification rather than conventional conduction methods
Solution Approach 2:
The patent creates a composite topological insulator structure by combining topological insulator material with magnetic materials. This composite structure enables the material to possess both topological protection properties (for energy-efficient conduction) and magnetic properties (for controlling carrier spin and achieving quantum Hall effect without external fields)
2Loss of energy
If quantum Hall effect is used for electrical conduction, then energy dissipation is reduced, but large external magnetic fields are required
Solution Approach 1:
The patent extracts the magnetic field generation function from external sources and integrates it directly into the topological insulator material through magnetic doping. This eliminates the need for external magnetic field application devices while maintaining the quantum Hall effect, thereby reducing device complexity while preserving energy efficiency
Solution Approach 2:
The magnetically-doped topological insulator generates its own internal magnetic field through the magnetic doping, eliminating the need for external magnetic field sources. The material serves itself by providing both the topological protection and the magnetic field necessary for quantum Hall effect, thereby simplifying the overall device structure
3Ease of operation
If uniform coercivity is used in topological insulator, then material simplicity is maintained, but controlled magnetization direction is limited
Solution Approach 1:
The patent applies local quality by creating regions with different coercivities within the topological insulator material. This allows different parts of the material to have optimized magnetic properties for specific functions, enabling precise control of magnetization directions in different regions while maintaining overall material integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables electrical conduction with minimal or no energy dissipation at high temperatures and reduces power consumption in electronic devices by controlling magnetization directions within the topological insulator, effectively storing information with low power usage.
Implementation Method 1
The quantum Hall effect is known as a principle of electrical conduction with very little or no energy dissipation
Implementation Method 2
forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions
Implementation Method 3
a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism
Data Source
AI summary
An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.