Topology-Selective Deposition for Precise Substrate Features
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Solution Overview
Problem
Existing methods struggle to form patterned features on substrates with desired dimensions as device features shrink, leading to increased manufacturing costs and time, particularly when forming topology-selective materials like etch stops.
Innovation Solution
A method involving topology-selective deposition of a first layer followed by a second layer, with selective etching to form features, utilizing cyclical deposition processes within a single reaction chamber, and optionally treating the second layer to achieve differential etch rates and compositions on substrate surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If typical deposition, pattern, and etch techniques are used, then material can be deposited and patterned, but manufacturing costs increase and fabrication time increases as feature size decreases
Solution Approach 1:
The patent applies preliminary action by forming a first material layer with a specific topology (e.g., conformal, non-conformal, or selective) before depositing the second material layer. This pre-established topology guides the subsequent deposition and etching processes, enabling precise feature formation without requiring complex lithography and etching steps, thereby reducing fabrication time and cost while maintaining high precision
Solution Approach 2:
The patent segments the formation process into distinct stages: first depositing a first material layer with controlled topology, then depositing a second material layer, and finally performing selective etching. This segmentation allows each step to be optimized independently, improving overall manufacturing efficiency and precision by breaking down the complex process into manageable segments
2Manufacturing precision
If conventional topo-selective formation methods are used, then etch stop material can be formed, but the process becomes more complex and less efficient as feature size decreases
Solution Approach 1:
The patent merges the formation of topology-selective material with the deposition process itself. By depositing the first material layer with controlled topology (conformal, non-conformal, or selective) as part of the standard deposition sequence, the patent eliminates the need for separate topo-selective formation steps, reducing process complexity while maintaining precision
Solution Approach 2:
The patent utilizes parameter changes during deposition (such as adjusting deposition conditions, temperature, pressure, or precursor flow rates) to control the topology of the first material layer. By changing process parameters rather than adding process steps, the patent achieves topology-selective material formation with reduced complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient formation of topology-selective deposited materials, reducing manufacturing costs and time by improving the precision and selectivity of feature formation on substrates.
Implementation Method 1
The step of depositing the first layer and/or the step of depositing the second layer can include a cyclical deposition process, such as a plasma-enhanced cyclical deposition process
Implementation Method 2
The step of depositing the first layer and/or the step of depositing the second layer can include a cyclical deposition process, such as a plasma-enhanced cyclical deposition process
Implementation Method 3
selectively etching the first layer of material relative to the second layer of material to thereby form features comprising topology-selective deposited material
Data Source
AI summary
A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.