Transistor with Toroidal Gate for On-State Breakdown
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Solution Overview
Problem
Transistors face a challenge in maintaining high on-state breakdown voltage without compromising their off-state breakdown characteristics, as existing designs prioritize off-state breakdown voltage improvements over on-state performance.
Innovation Solution
The transistor is modified by creating a torroidal or race-track shape with a longer gate that encircles the drain and discontinuous source regions, reducing current crowding and electric field intensity at the end portions, thereby enhancing on-state breakdown performance while maintaining off-state breakdown capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate length is increased to reduce electric field intensity, then on-state breakdown voltage improves, but device area increases
Solution Approach 1:
The patent employs parameter changes by varying the doping concentration parameter across different regions of the transistor. The first region has a first doping concentration while the second region has a second doping concentration, creating a gradient or stepped profile. This parameter variation allows the transistor to achieve higher breakdown voltage without proportionally increasing the physical dimensions, as the electrical field distribution is modified through doping profile optimization rather than simple geometric scaling.
Data Source
AI summary
A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.