Touch Sensing Layer Barrier Structure Against Oxide Shorting
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Solution Overview
Problem
The existing display devices face challenges in maintaining process reliability due to the formation of metal oxide layers between conductive and insulating layers in input sensing layers, which can lead to defects such as short-circuiting of sensing electrodes.
Innovation Solution
Incorporating a barrier layer with metal nitride, such as titanium nitride, between the conductive and sensing insulating layers to prevent the formation of metal oxide layers, thereby improving the reliability of the input sensing layer formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a conductive layer is disposed directly on a sensing insulating layer, then the input sensing layer can be formed with simpler structure, but metal oxide layers form between the conductive layer and insulating layer causing short-circuiting defects
Solution Approach 1:
A barrier layer comprising metal nitride is introduced as an intermediary between the conductive layer and the sensing insulating layer. This barrier layer prevents direct contact between the conductive layer and insulating layer, thereby preventing formation of metal oxide layers that would cause short-circuiting defects, while maintaining the overall layered structure of the input sensing layer.
Solution Approach 2:
The input sensing layer employs a composite structure where a metal nitride barrier layer is combined with the conductive layer and sensing insulating layer. The metal nitride material provides barrier functionality to prevent oxidation and short-circuiting, while the other layers maintain their respective functions, creating a multi-functional composite structure that resolves the reliability issue.
2Reliability
If a barrier layer comprising metal nitride is introduced between the conductive layer and sensing insulating layer, then metal oxide layer formation is prevented improving process reliability, but the structure becomes more complex
Solution Approach 1:
The metal nitride barrier layer serves as a thin intermediary film that prevents harmful interactions between the conductive layer and sensing insulating layer without significantly increasing structural complexity. The barrier layer is disposed directly between the two layers, providing a simple yet effective solution to prevent metal oxide formation and short-circuiting defects.
Solution Approach 2:
The invention changes the material parameter of the barrier layer from conventional materials to metal nitride, which has specific properties that prevent oxidation and short-circuiting. This material parameter change enables the barrier layer to fulfill its protective function while maintaining a simple layered structure, thus improving reliability without substantially increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a metal nitride barrier layer effectively prevents the formation of metal oxide layers, enhancing the patterned integrity of conductive layers and maintaining sensing sensitivity, thus improving the overall process reliability of the input sensing layer.
Implementation Method 1
The barrier layer that contains metal nitride may prevent formation of a metal oxide layer between the conductive layer and the sensing insulating layer
Data Source
AI summary
A display device includes a display panel configured to display an image, and an input sensing layer disposed on the display panel. The input sensing layer includes a sensing insulating layer disposed on the display panel and a conductive layer disposed on the sensing insulating layer. The conductive layer includes a barrier layer disposed directly on the sensing insulating layer and including metal nitride and a main conductive layer disposed on the barrier layer.