Touch Screen Substrate with Doped Amorphous Layer for Infrared Sensing
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Solution Overview
Problem
Current liquid crystal display (LCD) touch panels face limitations in enhancing touch sensitivity due to the difference in electrical characteristics between photo sensors and switching elements, leading to high development costs and reduced productivity.
Innovation Solution
A touch screen substrate is designed with a first sensing element that includes a first amorphous layer and a doped amorphous layer, connected to a switching element, which senses infrared light, and a second sensing element for visible light, enhancing sensitivity by using specific semiconductor materials and structures to improve photo current generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If various semiconductor materials are developed to enhance photo sensor sensitivity, then touch sensitivity is improved, but productivity is reduced and costs increase
Solution Approach 1:
The patent changes the electrical parameters of the photo sensor by introducing a doped amorphous layer with specific doping concentrations (1×10^19 to 1×10^21 atoms/cm³) and thickness (50-200 nm), transforming it into an electron well structure that enhances sensitivity without requiring new semiconductor material research
Solution Approach 2:
The patent creates a composite structure combining amorphous silicon layers with different doping levels (undoped, lightly doped, and heavily doped layers) to form an electron well, achieving enhanced photo sensor sensitivity through material composition rather than developing entirely new semiconductor materials
2Measurement precision
If various semiconductor materials are developed to enhance photo sensor sensitivity, then touch sensitivity is improved, but development costs increase
Solution Approach 1:
The patent achieves sensitivity enhancement by adjusting doping parameters (concentration and depth) of existing amorphous silicon material rather than developing new semiconductor materials, significantly reducing research and development costs
Solution Approach 2:
The patent uses standard amorphous silicon deposition and doping processes that are already established in LCD manufacturing, replacing the need for expensive and time-consuming new semiconductor material development
3Measurement precision
If photo sensor sensitivity is enhanced through material development, then touch detection accuracy is improved, but manufacturing complexity increases
Solution Approach 1:
The patent enhances sensitivity by modifying electrical parameters (doping concentration and depth) rather than changing material composition, maintaining compatibility with existing manufacturing processes and reducing device complexity
Solution Approach 2:
The patent creates a multi-functional amorphous layer structure that serves as both the photo sensor active layer and the electron well, eliminating the need for separate structures and reducing overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enhanced sensitivity of the touch screen substrate improves the detection of infrared light, increasing the accuracy of touch position calculation while reducing development costs and improving productivity.
Implementation Method 1
the doped amorphous layer which has a lower energy level than energy levels of the first and second amorphous layers, the second active pattern includes an electron well formed by the doped amorphous layer... the photo sensor generates the photo current, having multiple values, based on the incident light
Data Source
AI summary
A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.