Touch Sensor Fabrication via Post-Annealing Gate Formation
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Solution Overview
Problem
Existing on-cell touch display technologies face challenges with reduced production yield and increased manufacturing costs as screen size increases, and the in-cell optical touch technology requires additional capital investment for photomask manufacturing processes.
Innovation Solution
A method for fabricating a touch display device involves forming a sensor on a substrate with a semiconductor layer, gate insulation layer, and conductor layers, where the annealing process is performed after forming the interlayered insulation layer, allowing for hydrogenation of the semiconductor layer and preventing issues like metal atom reduction and peeling, resulting in improved carrier mobility and structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the gate is formed before the annealing process, then the manufacturing process is simpler, but metal atom reduction and precipitation occur causing peeling and poor sensor performance
Solution Approach 1:
The patent applies preliminary action by forming the interlayered insulation layer containing hydrogen source before the annealing process. This pre-positioning of hydrogen source allows the semiconductor layer to be hydrogenized during annealing, preventing metal atom reduction and precipitation that would otherwise cause peeling and poor sensor performance.
Solution Approach 2:
The patent uses beforehand cushioning by introducing hydrogen through the interlayered insulation layer prior to the annealing process. This pre-hydrogenation protects the semiconductor layer and metal atoms from reduction and precipitation during thermal processing, preventing peeling and ensuring structural stability.
2Productivity
If the sensor is embedded in the array substrate (in-cell), then production yield increases and costs decrease, but additional photomask manufacturing investment is required
Solution Approach 1:
The patent applies universality by designing a fabrication process that uses standard LCD manufacturing techniques and materials. The sensor structure is integrated into the existing array substrate process flow, allowing the same equipment and methods to produce both display and sensing functions, thereby increasing productivity without requiring specialized photomask manufacturing.
3Productivity
If the semiconductor layer is not hydrogenized, then the manufacturing process is faster, but carrier mobility and sensing performance are poor
Solution Approach 1:
The patent uses an intermediary approach by introducing hydrogen through the interlayered insulation layer during the annealing process. This mediator hydrogen atoms diffuse into the semiconductor layer, improving carrier mobility and sensing performance without requiring separate hydrogenation equipment or additional process steps, thus maintaining manufacturing speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables good sensing performance with enhanced carrier mobility, luminous flux, and structural stability, reducing production costs and increasing yield while supporting multi-touch capabilities without size limitations.
Implementation Method 1
performing an annealing process, removing the interlayered insulation layer at a gate predetermined region after the annealing process is performed
Implementation Method 2
performing an annealing process, removing the interlayered insulation layer at a gate predetermined region after the annealing process is performed
Data Source
AI summary
A method for fabricating a touch display device is provided. The method includes: forming a sensor on a substrate, and forming a sensing signal line electrically connected to the sensor. The method of forming the sensor includes: forming a semiconductor layer including a semiconductor pattern of the sensor on the substrate, forming a gate insulation layer on the semiconductor layer, forming a first conductor layer on the gate insulation layer, forming an interlayered insulation layer on the gate insulation layer, performing an annealing process, removing the interlayered insulation layer on a gate predetermined region after the annealing process is performed, removing the first conductor layer on the gate predetermined region, forming a gate in the gate predetermined region, and forming a second conductor layer including a source and a drain of the sensor respectively electrically connected to the semiconductor pattern of the sensor.