Semiconductor Transducer Recess Structure for Stable Eutectic Bonding
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Solution Overview
Problem
Existing transducers face issues with bonding material spreading and scattering due to heat treatment, leading to operation failures, particularly in inertial sensors, necessitating a highly reliable bonding solution.
Innovation Solution
A transducer design featuring recesses in the insulation layers on either semiconductor substrate, with the bonding region surrounded by these recesses, prevents the eutectic reaction layer from spreading and scattering, ensuring stable bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If heat treatment is performed to form the bonding material by AlGe eutectic, then bonding strength is improved, but the bonding material spreads out and scatters causing operation failure
Solution Approach 1:
An inert gas atmosphere (nitrogen or helium) is introduced as an intermediary medium during the bonding process. This inert atmosphere prevents oxidation of the AlGe eutectic bonding material while allowing the bonding reaction to proceed, thereby maintaining bonding strength without causing scattering or operational failures
Solution Approach 2:
The bonding process is conducted in an inert gas atmosphere (nitrogen or helium) rather than in air or vacuum. This inert environment prevents unwanted chemical reactions and material degradation during heat treatment, ensuring reliable bonding without material scattering or operational failures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents the eutectic reaction layer from spreading or scattering, enhancing the reliability and integrity of the bonding process, thereby improving the operational stability of the transducer.
Implementation Method 1
a eutectic reaction layer bonding the first semiconductor substrate and the second semiconductor substrate to each other in a bonding region
Data Source
AI summary
A transducer includes a second semiconductor substrate on which a first insulation layer having a first metal layer on its surface is disposed, a first semiconductor substrate that overlaps the second semiconductor substrate and on which a second insulation layer having a second metal layer on its surface is disposed, a functional element located between the first semiconductor substrate and the second semiconductor substrate, and a eutectic reaction layer bonding the first semiconductor substrate and the second semiconductor substrate to each other in a bonding region located around the functional element. The eutectic reaction layer is a bonding layer formed by eutectic bonding between the first metal layer and the second metal layer. At least one of the first insulation layer and the second insulation layer has a recess having a bottom wider than the bonding region in plan view. The bonding region is located at the bottom.