Insulating Transformer Chip Layout for High-Voltage Pulse Isolation
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Solution Overview
Problem
Current signal transmitting devices, such as insulated gate drivers, face challenges in efficiently transmitting pulse signals while maintaining electrical insulation between primary and secondary circuits, particularly at high voltage levels, which affects the reliability and dielectric strength of the device.
Innovation Solution
The proposed signal transmitting device employs a transformer-based configuration with multiple transformers connected in series, utilizing a specific coil arrangement and insulation layers to enhance the insulation voltage and dielectric strength, allowing for effective pulse signal transmission while maintaining electrical insulation between primary and secondary circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single transformer is used for signal transmission, then the device structure is simple, but the insulation voltage and dielectric strength are insufficient for high voltage applications
Solution Approach 1:
The patent divides the single transformer into multiple transformers connected in series. Each transformer provides a portion of the total insulation voltage, and their combined effect achieves the required high voltage insulation level. This segmentation allows the system to meet high voltage requirements while keeping individual transformer units manageable in size and complexity.
Solution Approach 2:
The patent combines multiple transformers in series to achieve the desired insulation voltage. By merging the insulation capabilities of individual transformers, the system reaches the required dielectric strength for high voltage applications. The series connection configuration ensures that the total insulation voltage is the sum of individual transformer insulation voltages.
2Reliability
If multiple transformers are connected in series to increase insulation voltage, then the dielectric strength improves, but the device complexity increases
Solution Approach 1:
The patent employs a nested structure where multiple transformers are integrated within a unified package housing. The transformers are arranged in series and nested within the same structural envelope, sharing common mounting structures, connection terminals, and protective elements. This nesting approach reduces overall device complexity by consolidating multiple components into a coordinated integrated assembly rather than separate units.
3Reliability
If insulation layers are added between coils to improve electrical insulation, then the dielectric strength increases, but the transformer size and complexity increase
Solution Approach 1:
The patent utilizes thin film insulation layers deposited between the primary and secondary coils. These thin film structures provide effective electrical insulation and dielectric strength while occupying minimal space. The thin film approach allows the transformer to achieve required insulation levels without significant increases in volume, maintaining compact dimensions suitable for integrated circuit applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the dielectric strength and insulation voltage, enabling reliable pulse signal transmission across high voltage levels, thereby enhancing the overall performance and reliability of the signal transmitting device.
Implementation Method 1
a transformer (15) electrically connecting the primary circuit (13) and the secondary circuit (14)... a first coil (31A, 31B, 33A, 33B) configured to be actuated by application of a first voltage... a second coil (32A, 32B, 34A, 34B) that is magnetically coupled to the first coil (31A, 31B, 33A, 33B)
Data Source
AI summary
A transformer chip of a signal transmitting device has a substrate, an element insulation layer, and a first transformer and a second transformer provided within the element insulation layer. The first transformer comprises a first coil, and a second coil positioned facing the first coil in the z direction. The second transformer comprises a first coil, and a second coil positioned facing the first coil in the z direction. The second coil of the first transformer and the second coil of the second transformer are electrically connected. The transformer chip comprises a back surface insulating layer provided on the back surface of the substrate.