Insulated Transformer Chip Package for Low-Interference Signal Relay
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Solution Overview
Problem
Conventional semiconductor devices for inverter systems in electric vehicles face challenges in efficiently transmitting high-voltage signals across different voltage levels, leading to potential disturbances in magnetic fields that affect transmission efficiency.
Innovation Solution
The semiconductor device incorporates a third semiconductor element of an inductive type, acting as an insulation transformer with non-magnetic materials for the electroconductive support and bonding layers, ensuring that the first and second semiconductor elements are insulated and allowing for efficient signal relay between them, thereby preventing magnetic field disturbances and improving transmission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional semiconductor devices transmit high-voltage signals across different voltage levels, then signal transmission is achieved, but magnetic field disturbances occur that reduce transmission efficiency
Solution Approach 1:
The patent introduces a transformer chip as an intermediary component between the control element and drive element. This transformer chip contains a magnetic core and windings that act as a mediator to transfer signals between different voltage levels while isolating and managing magnetic field interactions, thereby preventing magnetic field disturbances from affecting transmission efficiency
Solution Approach 2:
The patent changes the magnetic properties of the support structure by using a non-magnetic material (such as ferrite or plastic) for the third part of the support that contacts the transformer chip. This parameter change in magnetic permeability prevents the support from becoming part of the magnetic circuit, reducing magnetic field disturbances and improving signal transmission efficiency
2Area of stationary object
If semiconductor elements are placed close together for compact design, then device size is reduced, but magnetic field interference between elements increases
Solution Approach 1:
The transformer chip serves as a physical and magnetic intermediary between semiconductor elements, allowing them to be positioned in close proximity for compact design while the transformer's magnetic core confines and manages the magnetic field, preventing interference between adjacent elements
Solution Approach 2:
The patent applies different magnetic properties to different parts of the support structure. The third part of the support that contacts the transformer chip is made of non-magnetic material to locally manage magnetic field characteristics, allowing compact element placement without causing widespread magnetic interference across the device
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the transmission efficiency of signals between semiconductor elements, ensuring reliable operation under varying voltage conditions and reducing potential magnetic field interference.
Implementation Method 1
a third semiconductor element (13) supported by the electroconductive support (2), electrically connected to the first semiconductor element (11) and the second semiconductor element (12), and insulating the first semiconductor element (11) and the second semiconductor element (12) from each other
Data Source
AI summary
A semiconductor device includes: an electroconductive support including leads; a first semiconductor element supported by the support; a second semiconductor element supported by the support; a third semiconductor element supported by the support, electrically connected to the first and the second semiconductor elements, and insulating the first and the second semiconductor elements from each other; and a sealing resin covering the first, the second and the third semiconductor elements and a part of the support. The support includes: a first part overlapping with the first semiconductor element as viewed in a thickness direction of the leads; a second part overlapping with the second semiconductor element as viewed in the thickness direction; and a third part overlapping with the third semiconductor element as viewed in the thickness direction. The third part is made of a non-magnetic material having a relative permeability of less than 100.