Multilayer Transformer Coil Layout for Low-Warpage Semiconductors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor device in existing technologies experiences significant warping due to the formation of transformers with large amounts of warping, which affects the structural integrity and functionality.
Innovation Solution
The semiconductor device incorporates a multilayer wiring layer with specific coil configurations and metal film placements, including a first and second coil facing each other with an insulating layer, and metal films spaced apart by a defined distance, along with recesses and guard rings to improve structural stability and dielectric breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If transformers are formed with large amounts of warping, then the device complexity is reduced, but the structural integrity deteriorates due to significant warpage
Solution Approach 1:
The device is divided into a coil region and a peripheral region, with the metal film selectively formed only in the peripheral region. This segmentation allows the coil region to maintain its transformer structure while the peripheral region provides warpage compensation, thus reducing overall device complexity while maintaining structural integrity.
Solution Approach 2:
The metal film is formed locally in the peripheral region rather than uniformly across the entire device. This local quality approach allows the peripheral region to provide warpage compensation through the metal film's mechanical properties, while the coil region maintains its original transformer structure, resolving the contradiction between device complexity and structural integrity.
2Manufacturing precision
If metal films are placed close to coils, then the manufacturing precision is improved, but the dielectric breakdown voltage deteriorates
Solution Approach 1:
The device structure is segmented into a coil region and a peripheral region, with the metal film formed only in the peripheral region. This spatial segmentation ensures that even when the metal film is placed close to coils for manufacturing precision, the dielectric breakdown voltage is protected by maintaining adequate spacing in the critical coil area while allowing close placement in the non-critical peripheral area.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate and a multilayer wiring layer disposed on the semiconductor substrate. The semiconductor substrate includes, in plan view, a coil region and a peripheral region surrounding the coil region. The multilayer wiring layer includes a first coil, a second coil, a third coil, a fourth coil, and a metal film. The first coil and the second coil are formed in a first wiring layer being one of the plurality of wiring layers disposed on the coil region. The third coil and the fourth coil are formed in a second wiring layer being another one of the plurality of wiring layers disposed on the coil region. The second wiring layer is disposed above the first wiring layer. The third coil and the fourth coil are disposed so as to face the first coil and the second coil, respectively.