Transformer-Coupled Semiconductor Package for Compact Dielectric Isolation
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Solution Overview
Problem
Conventional semiconductor devices face challenges in maintaining dielectric strength when downsized, particularly due to the reliance on separation distance between high-voltage and low-voltage circuits, which can lead to decreased bonding strength and increased susceptibility to foreign matter and resin intervention.
Innovation Solution
The semiconductor device incorporates a support substrate with insulating base members and substrate wiring that directly connects semiconductor elements to coils, eliminating the need for bonding wires and ensuring close contact between elements and the substrate, thereby enhancing adherence and reducing gaps that could compromise dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the separation distance between high-voltage and low-voltage circuits is increased to maintain dielectric strength, then the dielectric strength is improved, but the device size increases and bonding strength decreases
Solution Approach 1:
An insulating substrate is introduced as an intermediary component between high-voltage and low-voltage circuits. The substrate provides dielectric strength through its material properties rather than relying on separation distance, enabling compact device design while maintaining electrical insulation.
Solution Approach 2:
The patent changes the approach from geometric parameter (separation distance) to material parameter (dielectric constant, breakdown voltage) by selecting insulating substrates with appropriate electrical properties. This allows maintaining dielectric strength while reducing the physical separation distance required.
2Reliability
If bonding wires are used to connect semiconductor elements to external terminals, then electrical connection is achieved, but bonding strength decreases and susceptibility to foreign matter increases
Solution Approach 1:
The patent replaces the mechanical bonding wire connection system with a direct substrate integration system. Semiconductor elements are mounted directly on the insulating substrate with external terminals formed on the substrate, eliminating the need for bonding wires and their associated reliability issues.
3Productivity
If devices are downsized to improve integration density, then productivity is improved, but dielectric strength decreases due to reduced separation distance
Solution Approach 1:
The patent transitions from relying on geometric separation distance to relying on material dielectric properties. By selecting insulating substrates with high dielectric strength, the design achieves compact size while maintaining adequate electrical insulation between high-voltage and low-voltage circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses decreases in dielectric and bonding strength, allowing for downsizing while maintaining robustness and preventing foreign matter and resin intervention, thus improving the overall performance of the semiconductor device.
Implementation Method 1
The third semiconductor chip is a transformer chip having a transformer integrated therein, where the transformer transfers the switch control signal and so on, while insulating the direct current between the first semiconductor chip and the second semiconductor chip.
Implementation Method 2
an insulating element including a first coil and a second coil magnetically coupled to each other
Data Source
AI summary
A semiconductor device includes: a first semiconductor element; a second semiconductor element; an insulating element including a first coil; a second coil magnetically coupled to the first coil; and a support substrate on which the first semiconductor element and the second semiconductor element are mounted. The support substrate includes an insulating base member, and a substrate wiring formed on the base member. The substrate wiring includes a first wiring member electrically interposed between the first semiconductor element and the first coil, and a second wiring member electrically interposed between the second semiconductor element and the second coil. The second coil is arranged between the first coil and the base member. The insulating element is supported by the support substrate.