Semiconductor Transformer Housing Grounding for Reduced Insulation
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Solution Overview
Problem
Existing semiconductor transformers have large potential differences between high-voltage portion housings, leading to increased insulation requirements, which in turn increase manufacturing costs and volume.
Innovation Solution
The semiconductor transformer modules are configured with a series connection of high-voltage portions, where the ground lines of the housings are connected to circuit lines with varying potential differences, optimizing the insulation distance between housings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If housings are disposed such that voltage difference is large, then insulation strength is improved, but total cost and volume increase
Solution Approach 1:
The patent changes the electrical potential parameter of the housings by connecting them to different circuit lines with varying potential differences. This parameter change allows the insulation distance to be optimized based on actual voltage differences rather than assuming maximum voltage differences, thereby reducing the required insulation volume while maintaining reliability.
Solution Approach 2:
The patent applies equipotentiality by connecting housings to circuit lines that have the same or similar potential differences with respect to a reference point. This reduces the voltage difference between adjacent housings, allowing for reduced insulation distances and volumes while maintaining adequate insulation strength.
2Reliability
If housings are disposed such that voltage difference is large, then insulation strength is improved, but manufacturing cost increases
Solution Approach 1:
The patent optimizes the electrical potential parameters of housing connections to reduce the voltage differences between housings. This parameter optimization reduces the required insulation specifications, which directly lowers manufacturing costs while maintaining the necessary insulation strength for reliable operation.
3Reliability
If insulation distance between housings is increased, then insulation strength is improved, but device volume increases
Solution Approach 1:
The patent changes the electrical potential distribution by strategically connecting housings to circuit lines with appropriate potential differences. This parameter change reduces the voltage stress between housings, allowing for reduced insulation distances and consequently smaller device volume while maintaining insulation strength.
Solution Approach 2:
By connecting housings to circuit lines that maintain similar potentials, the patent reduces the voltage difference between housings. This equipotential approach allows for minimized insulation distances, reducing the overall device volume without compromising insulation strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the potential difference between housings, minimizing the degree of insulation needed, thereby decreasing manufacturing costs and volume while maintaining efficient power conversion.
Implementation Method 1
a high-voltage portion configured to convert low-frequency AC power into high-frequency AC power
Implementation Method 2
a transformation portion configured to transform the converted high-frequency AC power into high-frequency and low-voltage AC power
Data Source
AI summary
A semiconductor transformer according to one embodiment of the present disclosure comprises a plurality of semiconductor transformer modules for transforming power, wherein each of the semiconductor transformer modules comprises: a high-voltage unit for transforming low-frequency AC power into high-frequency AC power; a transformation unit for transforming the transformed high-frequency AC power to high-frequency low-voltage AC power; and a low-voltage unit for transforming the transformed high-frequency low-voltage AC power to low-voltage DC power, the high-voltage unit is provided inside a housing made of a conductive material, and the housing has a ground line connected to one from among circuit lines of the high-voltage unit.